Intel corporation (20240194672). MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW simplified abstract
MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW
Organization Name
Inventor(s)
Bharath Bangalore Rajeeva of Hillsboro OR (US)
Manish Chandhok of Beaverton OR (US)
Gurpreet Singh of Portland OR (US)
Kevin Huggins of Beaverton OR (US)
Eungnak Han of Portland OR (US)
Florian Gstrein of Portland OR (US)
Marko Radosavljevic of Portland OR (US)
MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194672 titled 'MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW
The abstract describes an electronic device with two conductive structures, one in each of two sections. The second conductive structure is parallel to the first in one direction but larger in size in a perpendicular direction. Dielectric materials cover the conductive structures, with the first structure surrounded by the second.
- The device includes two parallel conductive structures of different sizes.
- Dielectric materials cover the conductive structures.
- The first structure is surrounded by the second structure.
Potential Applications: - Integrated circuits - Semiconductor devices - Electronics manufacturing
Problems Solved: - Enhancing conductivity in electronic devices - Improving performance of transistors
Benefits: - Increased efficiency in electronic devices - Enhanced signal transmission - Better overall device performance
Commercial Applications: Title: "Advanced Electronic Devices for Enhanced Performance" This technology can be used in the production of high-performance electronic devices, leading to improved consumer electronics, telecommunications equipment, and industrial machinery.
Prior Art: Further research can be conducted in the field of semiconductor devices, integrated circuits, and electronic materials to explore similar innovations.
Frequently Updated Research: Researchers are continually exploring new materials and designs to enhance the performance of electronic devices. Stay updated on the latest advancements in semiconductor technology.
Questions about Electronic Devices with Two Conductive Structures: 1. How does the size difference between the two conductive structures impact device performance? 2. What are the potential challenges in manufacturing electronic devices with multiple conductive structures?
Original Abstract Submitted
an ic device may include a first conductive structure in a first section and a second conductive structure in a second section. the second conductive structure is in parallel with the first conductive structure in a first direction. a dimension of the second conductive structure in a second direction perpendicular to the first direction is greater than a dimension of the first conductive structure in the second direction. the first conductive structure may be coupled to a channel region of a transistor. the second conductive structure may be coupled to a channel region of another transistor. a first structure comprising a first dielectric material may be over the first conductive structure. a second structure comprising a second dielectric material may be over the second section. a third structure comprising the first dielectric material may be over the second conductive structure and be at least partially surrounded by the second structure.
- Intel corporation
- Bharath Bangalore Rajeeva of Hillsboro OR (US)
- Manish Chandhok of Beaverton OR (US)
- Gurpreet Singh of Portland OR (US)
- Kevin Huggins of Beaverton OR (US)
- Eungnak Han of Portland OR (US)
- Florian Gstrein of Portland OR (US)
- Marko Radosavljevic of Portland OR (US)
- H01L27/088
- H01L21/02
- H01L21/027
- H01L23/522
- H01L29/10
- H01L29/423
- CPC H01L27/088