18344022. NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES (Intel Corporation)

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

Organization Name

Intel Corporation

Inventor(s)

Rachel A. Steinhardt of Beaverton OR (US)

Kevin P. O'brien of Portland OR (US)

Dmitri Evgenievich Nikonov of Beaverton OR (US)

John J. Plombon of Portland OR (US)

Tristan A. Tronic of Aloha OR (US)

Ian Alexander Young of Olympia WA (US)

Matthew V. Metz of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Carly Rogan of North Plains OR (US)

Brandon Holybee of Portland OR (US)

Raseong Kim of Portland OR (US)

Punyashloka Debashis of Hillsboro OR (US)

Dominique A. Adams of Portland OR (US)

I-Cheng Tung of Hillsboro OR (US)

Arnab Sen Gupta of Hillsboro OR (US)

Gauri Auluck of Hillsboro OR (US)

Scott B. Clendenning of Portland OR (US)

Pratyush P. Buragohain of Hillsboro OR (US)

Hai Li of Portland OR (US)

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

This abstract first appeared for US patent application 18344022 titled 'NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

Original Abstract Submitted

In one embodiment, a negative capacitance transistor device includes a perovskite semiconductor material layer with first and second perovskite conductors on opposite ends of the perovskite semiconductor material layer. The device further includes a dielectric material layer on the perovskite semiconductor material layer between the first and second perovskite conductors, a perovskite ferroelectric material layer on the dielectric material layer, and a third perovskite conductor on the perovskite ferroelectric material layer.