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Category:H01L21/8252
Subcategories
This category has the following 11 subcategories, out of 11 total.
A
C
F
G
L
M
S
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V
Pages in category "H01L21/8252"
The following 11 pages are in this category, out of 11 total.
1
- 18148754. METHOD AND STRUCTURE FOR REDUCED SUBSTRATE LOSS FOR GAN DEVICES simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18348741. ELECTROSTATIC DISCHARGE IN GALLIUM NITRIDE DEVICES (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18385137. NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIRCUITS (STMicroelectronics International N.V.)
- 18820115. ELECTRONIC DEVICE (STMicroelectronics International N.V.)
B
T
- Taiwan semiconductor manufacturing company, ltd. (20250015071). ELECTROSTATIC DISCHARGE IN GALLIUM NITRIDE DEVICES
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 9th, 2025
- Texas instruments incorporated (20240429233). FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR THE FRINGE CAPACITOR
- TEXAS INSTRUMENTS INCORPORATED patent applications on December 26th, 2024