Taiwan semiconductor manufacturing company, ltd. (20250015071). ELECTROSTATIC DISCHARGE IN GALLIUM NITRIDE DEVICES
ELECTROSTATIC DISCHARGE IN GALLIUM NITRIDE DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shih-Fan Chen of Hsinchu City TW
ELECTROSTATIC DISCHARGE IN GALLIUM NITRIDE DEVICES
This abstract first appeared for US patent application 20250015071 titled 'ELECTROSTATIC DISCHARGE IN GALLIUM NITRIDE DEVICES
Original Abstract Submitted
providing a resistor between a gate of a target device (e.g., a gallium nitride (gan) high-electron-mobility transistor device) and a clamp circuit improves electrostatic discharge (esd) protection between an input/output (io) and the target device. for example, the resistor may result in esd protection between the io and a source of the target device and between the io and a drain of the target device may be at least 2 kilovolts under the human body model. because esd protection is improved, chances of burn out in the target device are reduced. additionally, larger currents may be applied in the clamp circuit without risk of esd.