18385137. NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIRCUITS (STMicroelectronics International N.V.)

NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIRCUITS

Organization Name

STMicroelectronics International N.V.

Inventor(s)

Giovanni Giorgino of Caltagirone IT

Maria Eloisa Castagna of Catania IT

Virgil Guillon of Tours FR

Cristina Tringali of Augusta IT

Ferdinando Iucolano of Gravina di Catania IT

Aurore Constant of Tours FR

NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIRCUITS

This abstract first appeared for US patent application 18385137 titled 'NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIRCUITS

Original Abstract Submitted

Methods, systems, and apparatuses for normally-on GaN high electron mobility transistors (HEMT) integration on monolithic p-GaN integrated circuits (ICs) platforms are provided. In particular, the integrated circuit platforms may include both enhancement mode and depletion mode HEMT power devices in monolithically integrated p-GaN power ICs. Exemplary methods may include treating at least one of a plurality of p-GaN gates with an in-situ plasma treatment to deactivate Mg in the p-GaN gate treated and deplete this p-Gan gate of Mg. The depleted p-GaN gate may be the gate for the normally on HEMT in the IC. At least one of the p-GaN gates not exposed to the in-situ plasma pretreatment may be the gate of the normally off HEMT in the IC.