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Category:H01L21/822
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Pages in category "H01L21/822"
The following 200 pages are in this category, out of 213 total.
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- 17522974. GATE-CUT AND SEPARATION TECHNIQUES FOR ENABLING INDEPENDENT GATE CONTROL OF STACKED TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17806292. STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808568. CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17838384. THREE-DIMENSIONAL SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936843. ANTI-FUSE AND FUSE STRUCTURES USING ANISOTROPIC ETCHING OF THE SUBSTRATE USING A PATTERN OF ETCH RELEASE HOLES FOR IMPROVING THE FUNCTIONALITY OF QUBIT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 18047954. OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 18059098. ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18065860. STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT simplified abstract (International Business Machines Corporation)
- 18067029. STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract (International Business Machines Corporation)
- 18068570. GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18080715. MULTI-LAYER CHIP ARCHITECTURE AND FABRICATION simplified abstract (Google LLC)
- 18081795. STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract (International Business Machines Corporation)
- 18091714. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract (Intel Corporation)
- 18135530. 3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18145034. STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 18147699. INVERTER WITH BACKSIDE POWER DELIVERY NETWORK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18151279. Dielectric Walls for Complementary Field Effect Transistors simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151643. INTEGRATED CIRCUIT PACKAGES AND METHODS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18159462. DEVICE AND METHOD OF FORMING 3D U-SHAPED NANOSHEET CFET simplified abstract (Tokyo Electron Limited)
- 18172595. 3D U-SHAPED NANOSHEET DEVICE simplified abstract (Tokyo Electron Limited)
- 18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18179511. STACKED UPPER TRANSISTOR AND LOWER TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18180887. CROSS COUPLED STACKED TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18185394. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18196191. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18214682. STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL (International Business Machines Corporation)
- 18216520. STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATERIALS (Intel Corporation)
- 18219875. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18299368. BONDING LAYER BETWEEN STACKED INTEGRATED CIRCUITS simplified abstract (HONEYWELL INTERNATIONAL INC.)
- 18302948. NFET and PFET with Different Fin Numbers in FinFET Based CFET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18306004. VERTICALLY STACKED TRANSISTORS AND FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18332054. THRESHOLD VOLTAGE TUNING USING A MULTIPLE DIPOLE LOOP PROCESS FOR CFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18345168. STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS (Intel Corporation)
- 18373098. SHIFTED MULTI-VIA CONNECTION FOR HYBRID BONDING simplified abstract (Tokyo Electron Limited)
- 18389625. INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract (Intel Corporation)
- 18404831. Gate Patterning for Stacked Device Structure simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435305. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18443997. MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444849. SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE BOTTOM SURFACE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18458447. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18459952. GATE PATTERNING FOR STACKED DEVICE STRUCTURE USING SELF-ASSEMBLED MONOLAYER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18493241. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18494792. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18499258. DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS simplified abstract (Samsung Electronics Co., Ltd.)
- 18512094. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18534217. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18544670. THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18587031. BONDED SEMICONDUCTOR DEVICES HAVING PROCESSOR AND STATIC RANDOM-ACCESS MEMORY AND METHODS FOR FORMING THE SAME simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18596404. 3D IC POWER GRID simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18601167. GATE ELECTRODE DEPOSITION IN STACKING TRANSISTORS AND STRUCTURES RESULTING THEREFROM (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18606739. FABRICATION OF HIGH ASPECT RATIO ELECTRONIC DEVICES WITH MINIMAL SIDEWALL SPACER LOSS simplified abstract (Applied Materials, Inc.)
- 18631842. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18637552. 3D Stackable Memory and Methods of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18675249. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18734212. METHOD OF MAKING AMPHI-FET STRUCTURE AND METHOD OF DESIGNING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18735002. SEMICONDUCTOR STORAGE DEVICE COMPRISING STAIRCASE PORTION simplified abstract (Kioxia Corporation)
- 18754172. METHOD OF FORMING PACKAGE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18755895. Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device Structures simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18824088. MATERIALS AND METHODS FOR COMPLEMENTARY FIELD-EFFECT TRANSISTORS HAVING MIDDLE DIELECTRIC ISOLATION LAYER (Applied Materials, Inc.)
- 18944378. SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18944448. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
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- Intel corporation (20240194533). INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract
- Intel corporation (20240222376). TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract
- Intel corporation (20240332403). STACKED TRANSISTORS simplified abstract
- Intel corporation (20240429131). MICRO THROUGH-SILICON VIA FOR TRANSISTOR DENSITY SCALING
- Intel corporation (20250006737). STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATERIALS
- Intel corporation (20250006738). STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS
- Intel Corporation patent applications on December 26th, 2024
- Intel Corporation patent applications on January 2nd, 2025
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 13th, 2024
- Intel Corporation patent applications on October 3rd, 2024
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240112056). ANTI-FUSE AND FUSE STRUCTURES USING ANISOTROPIC ETCHING OF THE SUBSTRATE USING A PATTERN OF ETCH RELEASE HOLES FOR IMPROVING THE FUNCTIONALITY OF QUBIT CIRCUITS simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International business machines corporation (20240178050). ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract
- International business machines corporation (20240186325). STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE simplified abstract
- International business machines corporation (20240203985). STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract
- International business machines corporation (20240203990). STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT simplified abstract
- International business machines corporation (20240203991). STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract
- International business machines corporation (20240203992). GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract
- International business machines corporation (20240213248). STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract
- International business machines corporation (20240222378). INVERTER WITH BACKSIDE POWER DELIVERY NETWORK simplified abstract
- International business machines corporation (20240304625). STACKED UPPER TRANSISTOR AND LOWER TRANSISTOR simplified abstract
- International business machines corporation (20240304626). CROSS COUPLED STACKED TRANSISTORS simplified abstract
- International business machines corporation (20240332082). STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES simplified abstract
- International business machines corporation (20240413084). STACKED FETs WITH BACKSIDE ANGLE CUT
- International business machines corporation (20240413085). STACKED TRANSISTORS WITH METAL VIAS
- International business machines corporation (20240429226). PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR
- International business machines corporation (20250006736). STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on December 12th, 2024
- International Business Machines Corporation patent applications on December 26th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- International Business Machines Corporation patent applications on January 2nd, 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 30th, 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 4th, 2024
- International Business Machines Corporation patent applications on June 20th, 2024
- International Business Machines Corporation patent applications on June 27th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on May 30th, 2024
- International Business Machines Corporation patent applications on October 3rd, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on September 12th, 2024
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- Qualcomm incorporated (20240136357). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract
- Qualcomm incorporated (20240234418). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract
- Qualcomm incorporated (20240379679). THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RELATED FABRICATION METHODS simplified abstract
- QUALCOMM Incorporated patent applications on April 25th, 2024
- QUALCOMM Incorporated patent applications on July 11th, 2024
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- Samsung electronics co., ltd. (20240096879). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096889). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105724). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162228). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162309). 3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF simplified abstract
- Samsung electronics co., ltd. (20240213249). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240266350). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240313071). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240321888). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240339453). THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20250022876). SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Samsung electronics co., ltd. (20250063811). INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THICK INTERGATE INSULATOR AND METHODS OF FORMING TING THE SAME
- Samsung electronics co., ltd. (20250063825). INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS OF FORMING THE SAME
- Samsung electronics co., ltd. (20250072106). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Samsung electronics co., ltd. (20250072107). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Samsung electronics co., ltd. (20250081562). SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGION WITH UNDERBLOCKING LAYER THEREON
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 27th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 27th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 16th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 23rd, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 23rd, 2025
- Samsung Electronics Co., Ltd. patent applications on January 30th, 2025
- Samsung Electronics Co., Ltd. patent applications on June 27th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 6th, 2025
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 10th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on October 10th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
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- Taiwan semiconductor manufacturing co., ltd. (20240194234). MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249979). SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE BOTTOM SURFACE AND METHOD OF MAKING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312846). GATE PATTERNING FOR STACKED DEVICE STRUCTURE USING SELF-ASSEMBLED MONOLAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312997). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20250095997). GATE ELECTRODE DEPOSITION IN STACKING TRANSISTORS AND STRUCTURES RESULTING THEREFROM
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 13th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 20th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240213121). 3D IC POWER GRID simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234210). INTEGRATED CIRCUIT PACKAGES AND METHODS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258314). STACKED COMPLEMENTARY FINFET PROCESS AND DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240268128). 3D Stackable Memory and Methods of Manufacture simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282772). NFET and PFET with Different Fin Numbers in FinFET Based CFET simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240284679). THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321640). Gate Patterning for Stacked Device Structure simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321646). THRESHOLD VOLTAGE TUNING USING A MULTIPLE DIPOLE LOOP PROCESS FOR CFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321870). METHOD OF MAKING AMPHI-FET STRUCTURE AND METHOD OF DESIGNING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240347506). METHOD OF FORMING PACKAGE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240347606). Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device Structures simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379855). CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240413100). STACKED TRANSISTOR PHYSICALLY UNCLONABLE FUNCTION
- Taiwan semiconductor manufacturing company, ltd. (20240413155). STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFACTURING METHOD THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20240413156). CFETs and the Methods of Forming the Same
- Taiwan semiconductor manufacturing company, ltd. (20250006561). STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHODS FOR FORMING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250006739). COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250072100). SEMICONDUCTOR DEVICE
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 1st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 22nd, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 8th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on December 12th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 27th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 23rd, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on January 2nd, 2025
