Qualcomm incorporated (20240379679). THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RELATED FABRICATION METHODS simplified abstract
Contents
THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RELATED FABRICATION METHODS
Organization Name
Inventor(s)
Junjing Bao of San Diego CA (US)
THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RELATED FABRICATION METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379679 titled 'THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RELATED FABRICATION METHODS
The abstract describes a 3D dual complementary-circuit structure that combines two complementary circuits within a single forksheet structure by bisecting semiconductor slabs in each structure.
- Two complementary circuits are provided in the space of a single forksheet structure.
- A dividing wall bisects semiconductor slabs to create portions with different semiconductor types.
- Complementary metal oxide semiconductor (CMOS) circuits can be formed within a single forksheet structure.
- The second, third, and fourth semiconductor types may be the same as the first semiconductor type.
Potential Applications: - Integrated circuit design - Semiconductor manufacturing - Electronics industry
Problems Solved: - Efficient use of space in circuit design - Simplified manufacturing process - Enhanced performance of complementary circuits
Benefits: - Higher circuit density - Improved functionality - Cost-effective production
Commercial Applications: Title: "3D Dual Complementary-Circuit Structure for Advanced Integrated Circuits" This technology can be utilized in the development of advanced microprocessors, memory chips, and other semiconductor devices, catering to the growing demand for high-performance electronics in various industries.
Questions about 3D Dual Complementary-Circuit Structure: 1. How does this technology improve circuit efficiency?
- This technology enhances circuit efficiency by integrating two complementary circuits within a single structure, optimizing space and performance.
2. What are the potential cost savings associated with implementing this innovation?
- By streamlining the manufacturing process and increasing circuit density, this technology can lead to cost savings in semiconductor production.
Original Abstract Submitted
a 3d dual complementary-circuit structure includes a first forksheet structure stacked on a first side of, in a first direction, a second forksheet structure to provide two complementary circuits in a space of a single forksheet structure. a dividing wall bisects at least one semiconductor slab in the first forksheet structure into a first slab portion with a first semiconductor type and a second slab portion with a second semiconductor type and also bisects at least one semiconductor slab in the second forksheet structure into a third slab portion with a third semiconductor type and a fourth slab portion with a fourth semiconductor type. one of the second semiconductor type, the third semiconductor type, and the fourth semiconductor type may be a same semiconductor type as the first semiconductor type. two complementary metal oxide semiconductor (cmos) circuits may be formed in the area of a single forksheet structure.
