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Category:G11C13/00
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Pages in category "G11C13/00"
The following 200 pages are in this category, out of 271 total.
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- 17529215. TUNABLE TRUE RANDOM NUMBER GENERATOR simplified abstract (International Business Machines Corporation)
- 17540820. DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545195. GLOBAL HEATER FOR PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545671. SELECTIVE APPLICATION OF MULTIPLE PULSE DURATIONS TO CROSSBAR ARRAYS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551457. MEMORY CELL IN WAFER BACKSIDE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17581351. PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17699756. NEUROMORPHIC MEMORY CIRCUIT AND OPERATING METHOD THEROF simplified abstract (Samsung Electronics Co., Ltd.)
- 17717339. NEUROMORPHIC COMPUTING DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17818617. RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS simplified abstract (Micron Technology, Inc.)
- 17830004. DEVICE WITH NEURAL NETWORK simplified abstract (Samsung Electronics Co., Ltd.)
- 17831311. PRE-DECODER CIRCUITRY simplified abstract (Micron Technology, Inc.)
- 17831414. INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)
- 17855483. FORWARD-LOOKING DETERMINATION OF READ VOLTAGE USING MEMORY CELL PATTERNS simplified abstract (Micron Technology, Inc.)
- 17877613. MEMORY CELL READ OPERATION TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 17888298. STORING BITS WITH CELLS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17895988. TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRIOR READ OPERATIONS simplified abstract (Micron Technology, Inc.)
- 17896506. MEMORY DEVICE AND MANUFACTURING METHOD AND TEST METHOD OF THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896963. CASCODED SENSE AMPLIFIERS FOR SELF-SELECTING MEMORY simplified abstract (Micron Technology, Inc.)
- 17897021. FORWARD LOOKING ALGORITHM FOR VERTICAL INTEGRATED CROSS-POINT ARRAY MEMORY simplified abstract (Micron Technology, Inc.)
- 17911043. TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND METHODS OF THEIR OPERATION simplified abstract (SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION)
- 17931277. SEQUENCE ALIGNMENT WITH MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 17957945. DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract (Intel Corporation)
- 17957957. MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT simplified abstract (Intel Corporation)
- 17992143. APPARATUS AND METHOD WITH IN-MEMORY PROCESSING simplified abstract (Samsung Electronics Co., Ltd.)
- 17994817. IN-MEMORY COMPUTATION SYSTEM WITH COMPACT STORAGE OF SIGNED COMPUTATIONAL WEIGHT DATA simplified abstract (STMICROELECTRONICS S.r.l.)
- 18060884. SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE simplified abstract (SK hynix Inc.)
- 18071740. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18094351. ARTIFICIAL NEURAL NETWORK CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18105935. PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18156543. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18156707. STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18156734. MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157408. MEMORY DEVICE INCLUDING SWITCHING MATERIAL AND PHASE CHANGE MATERIAL simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18166859. NEUROMORPHIC APPARATUS HAVING 3D STACKED SYNAPTIC STRUCTURE AND MEMORY DEVICE HAVING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18170925. MULTI-RAIL SENSE CIRCUIT WITH PRE-CHARGE TRANSISTORS AND MEMORY CIRCUIT INCORPORATING THE SENSE CIRCUIT simplified abstract (GlobalFoundries U.S. Inc.)
- 18183068. DETERMINISTIC LOCAL KEY MASKING FOR HIGH-SPEED ENCRYPTION WITH KEY REUSE simplified abstract (QUALCOMM Incorporated)
- 18188729. PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18216661. CONDUCTANCE RANGE OPTIMIZATION (International Business Machines Corporation)
- 18298526. SHAPE DETECTION TRANSFORMATION USING MEMRISTIVE IN-MEMORY COMPUTING simplified abstract (International Business Machines Corporation)
- 18315381. SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK simplified abstract (SK hynix Inc.)
- 18334790. SELF-SELECTING MEMORY DEVICE, MEMORY SYSTEM HAVING THE SAME, AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18336791. BACK END DIELECTRIC-BASED MEMORY STRUCTURE IN A SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18337214. COMPENSATING NON-IDEALITY OF A NEUROMORPHIC MEMORY DEVICE (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18373490. WORD LINE DRIVERS FOR MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18402552. VERTICAL MEMORY DEVICE INCLUDING SELECTOR WITH VARIABLE RESISTIVE MATERIAL (SAMSUNG ELECTRONICS CO., LTD.)
- 18407074. IMPROVED VERTICAL 3D MEMORY DEVICE AND ACCESSING METHOD simplified abstract (Micron Technology, Inc.)
- 18409413. LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract (MICRON TECHNOLOGY, INC.)
- 18409992. CROSS-POINT PILLAR ARCHITECTURE FOR MEMORY ARRAYS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18419190. SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18451946. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18460473. SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18464093. NON-VOLATILE MEMORY DEVICE AND CORRESPONDING METHOD OF OPERATION simplified abstract (STMICROELECTRONICS S.R.L.)
- 18478776. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18494652. MEMORY DEVICE PERFORMING MULTIPLICATION USING LOGICAL STATES OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18503719. MEMORY DEVICE AND OPERATING METHOD OF THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18505787. SIGMA-DELTA MODULATOR, ADC USED TO READ INFORMATION OF RESISTIVE MEMORY USING THE SIGMA-DELTA MODULATOR, AND DEEP LEARNING NEURAL NETWORK COMPUTING SYSTEM INCLUDING THE ADC simplified abstract (SK hynix Inc.)
- 18516521. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18516733. STRESSING ALGORITHM FOR SOLVING CELL-TO-CELL VARIATIONS IN PHASE CHANGE MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18521109. MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18528935. ACCELERATION OF MODEL/WEIGHT PROGRAMMING IN MEMRISTOR CROSSBAR ARRAYS simplified abstract (HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP)
- 18536098. MEMORY DEVICE TO SENSE MEMORY CELLS WITHOUT BITLINE PRECHARGE simplified abstract (Micron Technology, Inc.)
- 18545245. THREE-STATE PROGRAMMING OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18561428. MEMORY CELL ARRAY UNIT (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18581340. FIRST FIRE OPERATION FOR OVONIC THRESHOLD SWITCH SELECTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18586174. MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 18600281. METHOD FOR PROCESSING INPUT VARIABLES BY MEANS OF A PROCESSING DEVICE HAVING AT LEAST ONE TRANSISTOR, DEVICE FOR EXECUTING THE METHOD, COMPUTING DEVICE AND USE simplified abstract (Robert Bosch GmbH)
- 18603281. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18611468. Non-Volatile Memory Circuit with Self-Terminating Read Current simplified abstract (Board of Regents, The University of Texas System)
- 18615521. RRAM CIRCUIT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18615936. NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18616989. SOCKET DESIGN FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18617466. ARCHITECTURE FOR MULTIDECK MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 18622033. SHARED DECODER ARCHITECTURE FOR THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 18624884. MEMORY DEVICE AND INITIALIZING METHOD THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
- 18661902. MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669140. MULTI-STATE PROGRAMMING OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18678802. PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18731706. WRITE ERROR COUNTER FOR MEDIA MANAGEMENT IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18734724. REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS simplified abstract (Micron Technology, Inc.)
- 18735782. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18738675. MEMORY CIRCUIT COMPRISING ELECTRONIC CELLS AND A CONTROL CIRCUIT (STMicroelectronics International N.V.)
- 18748196. METHOD FOR PROGRAMMING MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18768922. DECODER ARCHITECTURE FOR MEMORY DEVICE (Micron Technology, Inc.)
- 18813539. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18816540. STORAGE DEVICE (Kioxia Corporation)
- 18828335. CHALCOGENIDE-BASED MEMORY MATERIAL, AND MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18830510. STORAGE DEVICE AND METHOD OF CONTROLLING STORAGE DEVICE (Kioxia Corporation)
- 18890171. MULTIPLE TRANSISTOR ARCHITECTURE FOR THREE-DIMENSIONAL MEMORY ARRAYS (Micron Technology, Inc.)
- 18890624. MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES (Micron Technology, Inc.)
- 18941629. Repair Method in Phase Change Storage Apparatus, Phase Change Storage Apparatus, and Electronic Device (HUAWEI TECHNOLOGIES CO., LTD.)
- 18954089. SPLIT PILLAR ARCHITECTURES FOR MEMORY DEVICES (Micron Technology, Inc.)
- 18961468. MEMORY CIRCUIT AND METHOD FOR READING MEMORY CIRCUIT (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18968729. MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
B
H
- Huawei technologies co., ltd. (20240114808). PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD simplified abstract
- Huawei technologies co., ltd. (20240130253). PHASE CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD FOR PHASE CHANGE MEMORY simplified abstract
- Huawei technologies co., ltd. (20250069657). Repair Method in Phase Change Storage Apparatus, Phase Change Storage Apparatus, and Electronic Device
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 18th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 4th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on February 27th, 2025
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on February 6th, 2025
I
- Intel corporation (20240112730). DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- International business machines corporation (20240324475). PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract
- International business machines corporation (20240346660). SHAPE DETECTION TRANSFORMATION USING MEMRISTIVE IN-MEMORY COMPUTING simplified abstract
- International business machines corporation (20240420762). COMPENSATING NON-IDEALITY OF A NEUROMORPHIC MEMORY DEVICE
- International business machines corporation (20250005431). CONDUCTANCE RANGE OPTIMIZATION
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on December 19th, 2024
- International Business Machines Corporation patent applications on February 20th, 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
- International Business Machines Corporation patent applications on January 2nd, 2025
- International Business Machines Corporation patent applications on October 17th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on September 26th, 2024
K
- KABUSHIKI KAISHA TOSHIBA patent applications on January 23rd, 2025
- Kioxia corporation (20240321352). MEMORY DEVICE simplified abstract
- Kioxia corporation (20250095729). STORAGE DEVICE
- Kioxia corporation (20250095733). STORAGE DEVICE AND METHOD OF CONTROLLING STORAGE DEVICE
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on September 26th, 2024
M
- Micron technology, inc. (20240177772). MEMORY DEVICE PERFORMING MULTIPLICATION USING LOGICAL STATES OF MEMORY CELLS simplified abstract
- Micron technology, inc. (20240186234). Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells simplified abstract
- Micron technology, inc. (20240194256). WORD LINE DRIVERS FOR MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240194258). MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract
- Micron technology, inc. (20240203490). CURRENT REFERENCES FOR MEMORY CELLS simplified abstract
- Micron technology, inc. (20240221829). CROSS-POINT PILLAR ARCHITECTURE FOR MEMORY ARRAYS simplified abstract
- Micron technology, inc. (20240224825). LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract
- Micron technology, inc. (20240237358). IMPROVED VERTICAL 3D MEMORY DEVICE AND ACCESSING METHOD simplified abstract
- Micron technology, inc. (20240237360). ARCHITECTURE FOR MULTIDECK MEMORY ARRAYS simplified abstract
- Micron technology, inc. (20240265965). PRE-DECODER CIRCUITRY simplified abstract
- Micron technology, inc. (20240268127). CROSS POINT ARRAY ARCHITECTURE FOR MULTIPLE DECKS simplified abstract
- Micron technology, inc. (20240289597). TRANSFORMER NEURAL NETWORK IN MEMORY simplified abstract
- Micron technology, inc. (20240298553). SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES simplified abstract
- Micron technology, inc. (20240312534). MULTI-STATE PROGRAMMING OF MEMORY CELLS simplified abstract
- Micron technology, inc. (20240321349). SHARED DECODER ARCHITECTURE FOR THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract
- Micron technology, inc. (20240321350). REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS simplified abstract
- Micron technology, inc. (20240321351). WRITE ERROR COUNTER FOR MEDIA MANAGEMENT IN A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240321355). PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240339149). MEMORY DEVICE ARCHITECTURE USING MULTIPLE PHYSICAL CELLS PER BIT TO IMPROVE READ MARGIN AND TO ALLEVIATE THE NEED FOR MANAGING DEMARCATION READ VOLTAGES simplified abstract
- Micron technology, inc. (20240347107). SOCKET DESIGN FOR A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20250014640). DECODER ARCHITECTURE FOR MEMORY DEVICE
- Micron technology, inc. (20250014641). MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES
- Micron technology, inc. (20250087266). MULTIPLE TRANSISTOR ARCHITECTURE FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Micron technology, inc. (20250107105). SPLIT PILLAR ARCHITECTURES FOR MEMORY DEVICES
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on February 13th, 2025
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 20th, 2025
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 6th, 2025
- Micron Technology, Inc. patent applications on January 30th, 2025
- Micron Technology, Inc. patent applications on January 9th, 2025
- Micron Technology, Inc. patent applications on July 11th, 2024
- MICRON TECHNOLOGY, INC. patent applications on July 4th, 2024
- Micron Technology, Inc. patent applications on June 13th, 2024
- Micron Technology, Inc. patent applications on June 20th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on March 13th, 2025
- Micron Technology, Inc. patent applications on March 14th, 2024
- Micron Technology, Inc. patent applications on March 27th, 2025
- Micron Technology, Inc. patent applications on May 30th, 2024
- Micron Technology, Inc. patent applications on October 10th, 2024
- Micron Technology, Inc. patent applications on October 17th, 2024
- Micron Technology, Inc. patent applications on September 19th, 2024
- Micron Technology, Inc. patent applications on September 26th, 2024
- Micron Technology, Inc. patent applications on September 5th, 2024
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- Samsung electronics co., ltd. (20240161824). MEMORY DEVICE AND OPERATING METHOD OF THEREOF simplified abstract
- Samsung electronics co., ltd. (20240177771). SELF-SELECTING MEMORY DEVICE, MEMORY SYSTEM HAVING THE SAME, AND OPERATING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240404597). MEMORY DEVICE INCLUDING READ OFFSET COMPENSATOR AND OFFSET REFERENCE RESISTANCE COMPENSATION METHOD THEREOF
- Samsung electronics co., ltd. (20240414926). SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
- Samsung electronics co., ltd. (20240422991). VERTICAL MEMORY DEVICE INCLUDING SELECTOR WITH VARIABLE RESISTIVE MATERIAL
- Samsung electronics co., ltd. (20250081865). MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- Samsung electronics co., ltd. (20250095732). MEMORY DEVICE AND INITIALIZING METHOD THEREOF
- Samsung electronics co., ltd. (20250098558). CHALCOGENIDE-BASED MEMORY MATERIAL, AND MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 5th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 23rd, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 23rd, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 20th, 2025
