18188729. PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 PHASE CHANGE MATERIAL INCLUDING DEUTERIUM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHASE CHANGE MATERIAL INCLUDING DEUTERIUM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about the Technology
- 1.11 Original Abstract Submitted
PHASE CHANGE MATERIAL INCLUDING DEUTERIUM
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Arthur Roy Gasasira of HALFMOON NY (US)
LOUIS ZUOGUANG Liu of Schenectady NY (US)
Amlan Majumdar of White Plains NY (US)
PHASE CHANGE MATERIAL INCLUDING DEUTERIUM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18188729 titled 'PHASE CHANGE MATERIAL INCLUDING DEUTERIUM
Simplified Explanation
The patent application discusses how the addition of deuterium or hydrogen within phase change material (PCM) in PCM memory cells reduces active defects, making the PCM easier to nucleate during the SET process, ultimately increasing the programming voltage window of the cell.
- Deuterium or hydrogen within PCM passivates dangling bonds, reducing active defects in the amorphous phase.
- This makes the PCM easier to nucleate during the SET process of the PCM memory cell.
- The addition of deuterium or hydrogen increases the SET programming voltage window compared to a similar PCM cell without.
Key Features and Innovation
- Addition of deuterium or hydrogen within PCM - Reduction of active defects in the amorphous phase - Increased programming voltage window during the SET process
Potential Applications
- Memory storage devices - Semiconductor industry - Information technology
Problems Solved
- Active defects in the amorphous phase of PCM memory cells - Nucleation difficulties during the SET process - Limited programming voltage window
Benefits
- Enhanced performance of PCM memory cells - Improved reliability and efficiency - Increased data storage capacity
Commercial Applications
Title: Enhanced PCM Memory Cells for Improved Performance This technology can be utilized in the development of advanced memory storage devices, benefiting the semiconductor industry by improving data storage capabilities and overall efficiency.
Questions about the Technology
1. How does the addition of deuterium or hydrogen impact the nucleation process in PCM memory cells?
The addition of deuterium or hydrogen passivates dangling bonds, reducing active defects and making the PCM easier to nucleate during the SET process.
2. What are the potential long-term implications of using deuterium or hydrogen within PCM memory cells?
The long-term implications include enhanced performance, increased reliability, and improved data storage capacity in memory devices.
Original Abstract Submitted
The density of deuterium or hydrogen within phase change material (PCM) of a PCM memory cell reduces the active defects in the amorphous phase of the PCM by passivating dangling bonds, which results in the PCM becoming easier to nucleate during the SET process of the PCM memory cell. Resultingly, the addition of deuterium or hydrogen within the PCM relatively increases the SET programming voltage window of the PCM memory cell compared with a similar PCM cell without.