18615936. NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jheng-Hong Jiang of Hsinchu City (TW)
Cheung Cheng of Hsinchu City (TW)
Chia-Wei Liu of Zhubei City (TW)
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18615936 titled 'NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
The memory device described in the patent application includes a first conductor, first and second selector materials, a first variable resistive material, and a second conductor.
- The first conductor runs parallel to a first axis.
- The first selector material and the second selector material each have a portion that extends along a first sidewall of the first conductor.
- The first variable resistive material also has a portion that extends along the first sidewall of the first conductor.
- The second conductor runs parallel to a second axis that is perpendicular to the first axis.
- The first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a third axis that is perpendicular to both the first and second axes.
Potential Applications: - This technology could be used in various memory devices and storage systems. - It may find applications in electronic devices such as computers, smartphones, and tablets.
Problems Solved: - This technology may address the need for efficient and reliable memory storage solutions. - It could potentially improve the performance and capacity of memory devices.
Benefits: - Enhanced memory storage capabilities. - Improved efficiency and reliability of memory devices. - Potential for increased data storage capacity.
Commercial Applications: Title: Innovative Memory Device Technology for Enhanced Data Storage This technology could have commercial applications in the semiconductor industry, data storage sector, and consumer electronics market. It may lead to the development of more advanced and efficient memory devices, catering to the growing demand for high-performance data storage solutions.
Questions about the technology: 1. How does this memory device technology compare to existing memory storage solutions? 2. What are the potential cost implications of implementing this technology in memory devices?
Original Abstract Submitted
A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first potion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.