There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:CPC H01L29/78391
Jump to navigation
Jump to search
Pages in category "CPC H01L29/78391"
The following 56 pages are in this category, out of 56 total.
1
- 18148871. FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract (Intel Corporation)
- 18343203. P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES (Intel Corporation)
- 18344022. NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES (Intel Corporation)
- 18345127. TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS (Intel Corporation)
- 18402455. FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18546807. FERROELECTRIC FIELD-EFFECT TRANSISTOR WITH HIGH PERMITTIVITY INTERFACIAL LAYER simplified abstract (THE REGENTS OF THE UNIVERSITY OF CALIFORNIA)
- 18595429. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18756682. SEMICONDUCTOR DEVICES WITH FERROELECTRIC LAYER AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18895686. FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT DENSITY OF THE SAME (Samsung Electronics Co., Ltd.)
I
- IMEC VZW Patent Application Trends in 2024
- Intel corporation (20240222506). FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract
- Intel corporation (20250006839). P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES
- Intel corporation (20250006840). NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Intel corporation (20250006841). TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- INTEL CORPORATION Patent Application Trends in 2025
- Intel Corporation patent applications on January 2nd, 2025
- Intel Corporation patent applications on July 4th, 2024
K
S
- SAMSUNG ELECTRONICS CO., LTD Patent Application Trends in 2024
- Samsung electronics co., ltd. (20240274714). INTEGRATED CIRCUIT INCLUDING TRANSISTORS AND A METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20250015184). FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT DENSITY OF THE SAME
- Samsung Electronics Co., Ltd. Patent Application Trends in 2024
- SAMSUNG ELECTRONICS CO., LTD. Patent Application Trends in 2024
- Samsung electronics Co., Ltd. Patent Application Trends in 2024
- Samsung electronics CO., LTD. Patent Application Trends in 2025
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Patent Application Trends in 2025
- SK hynix Inc. Patent Application Trends in 2025
T
- Taiwan Semiconductor Manufacturing Co., Ltd Patent Application Trends in 2024
- Taiwan semiconductor manufacturing co., ltd. (20240250171). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. Patent Application Trends in 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Taiwan Semiconductor Manufacturing Company Limited Patent Application Trends in 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. Patent Application Trends in 2025
- Taiwan semiconductor manufacturing company, ltd. (20240213367). TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240347632). SEMICONDUCTOR DEVICES WITH FERROELECTRIC LAYER AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379846). FeFET OF 3D STRUCTURE FOR CAPACITANCE MATCHING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379847). Memory Array Channel Regions simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379848). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. Patent Application Trends in 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. Patent Application Trends in 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. Patent Application Trends in 2025
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 6th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 27th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on October 17th, 2024
- The Regents of The University Of California Patent Application Trends in 2024
- THE REGENTS OF THE UNIVERSITY OF CALIFORNIA Patent Application Trends in 2024
- TOKYO INSTITUTE OF TECHNOLOGY Patent Application Trends in 2024
