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Category:C30B29/06
Subcategories
This category has the following 13 subcategories, out of 13 total.
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Pages in category "C30B29/06"
The following 27 pages are in this category, out of 27 total.
1
- 18100978. METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITAXIAL PROCESS simplified abstract (Applied Materials, Inc.)
- 18397635. THERMAL MONITOR FOR HIGH PRESSURE PROCESSING simplified abstract (ASM IP Holding B.V.)
- 18471940. LAYER TRANSFER USING PATTERNED MASKS AND RELATED SYSTEMS (Massachusetts Institute of Technology)
- 18478203. METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT simplified abstract (DENSO CORPORATION)
- 18478203. METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18522817. METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18538267. INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE simplified abstract (Applied Materials, Inc.)
- 18667515. METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH simplified abstract (Applied Materials, Inc.)
- 18886502. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SEMICONDUCTOR DEVICE (Infineon Technologies AG)
- 18894828. SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR (AGC Inc.)
- 18954712. APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION (Applied Materials, Inc.)
- 18983235. APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION (Applied Materials, Inc.)
- 19020623. SiC SINGLE CRYSTAL SUBSTRATE (Resonac Corporation)
A
- Applied materials, inc. (20240247405). METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITAXIAL PROCESS simplified abstract
- Applied materials, inc. (20240301584). METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH simplified abstract
- Applied materials, inc. (20250087485). APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION
- Applied materials, inc. (20250132155). APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION
- Applied Materials, Inc. patent applications on April 24th, 2025
- Applied Materials, Inc. patent applications on July 25th, 2024
- Applied Materials, Inc. patent applications on March 13th, 2025
- Applied Materials, Inc. patent applications on September 12th, 2024