18886502. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SEMICONDUCTOR DEVICE (Infineon Technologies AG)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hans-Joachim Schulze of Taufkirchen DE
[[:Category:Daniel Schl�gl of Villach AT|Daniel Schl�gl of Villach AT]][[Category:Daniel Schl�gl of Villach AT]]
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18886502 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SEMICONDUCTOR DEVICE
Original Abstract Submitted
A method of manufacturing semiconductor devices in a silicon MCZ (magnetic Czochralski) semiconductor body is proposed. The method includes processing the silicon MCZ semiconductor body by an oxidation process at temperatures exceeding 1150° C. and below 1220° C. Thereafter, platinum (Pt) is introduced into the silicon MCZ semiconductor body.