Pages that link to "Category:Kirby Maxey of Hillsboro OR US"
The following pages link to Category:Kirby Maxey of Hillsboro OR US:
Displaying 14 items.
- Intel corporation (20250112122). BACKSIDE POWER GATING (â links)
- Intel corporation (20250113521). DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS (â links)
- Intel corporation (20250113540). TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME (â links)
- Intel corporation (20250113547). INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS (â links)
- Intel corporation (20250113572). METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIVE METALLIZATION TO FORM A SOURCE OR DRAIN STRUCTURE (â links)
- Intel corporation (20250113573). TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER (â links)
- Intel corporation (20250113599). METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES (â links)
- 18477906. BACKSIDE POWER GATING (INTEL CORPORATION) (â links)
- 18478626. DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS (INTEL CORPORATION) (â links)
- 18375055. TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME (INTEL CORPORATION) (â links)
- 18375064. INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS (INTEL CORPORATION) (â links)
- 18375060. METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIVE METALLIZATION TO FORM A SOURCE OR DRAIN STRUCTURE (INTEL CORPORATION) (â links)
- 18478691. TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER (INTEL CORPORATION) (â links)
- 18477414. METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES (INTEL CORPORATION) (â links)