Category:Tze-Liang Lee of Hsinchu (TW)
Tze-Liang Lee
Tze-Liang Lee from Hsinchu (TW) has applied for patents in technology areas such as H01L21/762, H01L27/088, H01L29/06 with taiwan semiconductor manufacturing co., ltd..
Patents
Pages in category "Tze-Liang Lee of Hsinchu (TW)"
The following 48 pages are in this category, out of 48 total.
1
- 17592995. Fin Field-Effect Transistor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17648037. Dummy Hybrid Film for Self-Alignment Contact Formation simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17651329. Oxygen-Free Protection Layer Formation in Wafer Bonding Process simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651665. Wafer Bonding Incorporating Thermal Conductive Paths simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651671. Isolation Layers for Reducing Leakages Between Contacts simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17674459. Semiconductor Device with Integrated Metal-Insulator-Metal Capacitors simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17674575. Photoresist and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17674977. Deposition Apparatus and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17717731. SEMICONDUCTOR DEVICE WITH INTEGRATED METAL-INSULATOR-METAL CAPACITORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18306716. Isolation Regions For Isolating Transistors and the Methods Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18348868. SELECTIVE SIN CAPPING ON METAL GATE FOR METAL OXIDATION PREVENTION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18401800. METHOD FOR FORMING AND USING MASK simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402187. FORMING ISOLATION REGIONS WITH LOW PARASITIC CAPACITANCE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18431346. REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432064. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18447539. CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18498851. METHOD FOR FORMING INTERCONNECT STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18525473. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18595554. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18639575. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18649086. PHOTORESIST LAYER OUTGASSING PREVENTION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18668960. Forming Isolation Regions for Separating Fins and Gate Stacks simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18753240. DIELECTRIC SPACER TO PREVENT CONTACTING SHORTING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240249942). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240429313). SELECTIVE BOTTOM SEED LAYER FORMATION FOR BOTTOM-UP EPITAXY
- Taiwan semiconductor manufacturing co., ltd. (20250087528). FORMING ISOLATION REGIONS WITH LOW PARASITIC CAPACITANCE
- Taiwan semiconductor manufacturing company, ltd. (20240112905). Semiconductor Device and Method simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136184). METHOD FOR FORMING AND USING MASK simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178059). REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213161). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258390). SEMICONDUCTOR DEVICE, FINFET DEVICE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282571). METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282577). PHOTORESIST LAYER OUTGASSING PREVENTION simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304496). Forming Isolation Regions for Separating Fins and Gate Stacks simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304679). SELECTIVE SIN CAPPING ON METAL GATE FOR METAL OXIDATION PREVENTION simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240347623). DIELECTRIC SPACER TO PREVENT CONTACTING SHORTING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240377732). PHOTORESIST FOR SEMICONDUCTOR FABRICATION simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379346). FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379517). WAFER BONDING INCORPORATING THERMAL CONDUCTIVE PATHS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379815). DUMMY HYBRID FILM FOR SELF ALIGNMENT CONTACT FORMATION simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240413215). INNER SPACER FORMATION THROUGH STIMULATION
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- US Patent Application 17819679. Semiconductor Devices Including Backside Power Via and Methods of Forming the Same simplified abstract
- US Patent Application 18227231. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18230062. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18230712. SURFACE OXIDATION CONTROL OF METAL GATES USING CAPPING LAYER simplified abstract
- US Patent Application 18358508. Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment simplified abstract
- US Patent Application 18366352. Interconnect Features With Sharp Corners and Method Forming Same simplified abstract
- US Patent Application 18366469. CONTACT PLUG STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME simplified abstract