Taiwan semiconductor manufacturing company, ltd. (20240413215). INNER SPACER FORMATION THROUGH STIMULATION
INNER SPACER FORMATION THROUGH STIMULATION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Syun-Ming Jang of Hsinchu (TW)
Mu-Chieh Chang of Zhubei City (TW)
INNER SPACER FORMATION THROUGH STIMULATION
This abstract first appeared for US patent application 20240413215 titled 'INNER SPACER FORMATION THROUGH STIMULATION
Original Abstract Submitted
a method includes forming a stack of layers, which includes a plurality of semiconductor nanostructures, and a plurality of sacrificial layers. the plurality of semiconductor nanostructures and the plurality of sacrificial layers are arranged alternatingly. the method further includes laterally recessing the plurality of sacrificial layers to form lateral recesses, depositing a spacer layer extending into the lateral recesses, trimming the spacer layer to form inner spacers, and performing a treatment process to reduce dielectric constant values of the inner spacers.