18649086. PHOTORESIST LAYER OUTGASSING PREVENTION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
PHOTORESIST LAYER OUTGASSING PREVENTION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Cheng Liu of Hsinchu (TW)
PHOTORESIST LAYER OUTGASSING PREVENTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18649086 titled 'PHOTORESIST LAYER OUTGASSING PREVENTION
The method of manufacturing a semiconductor device involves forming a photoresist layer over a substrate and then creating a dehydrated film over the photoresist layer. The photoresist layer is exposed to actinic radiation to create an exposed portion and an unexposed portion.
- Selective exposure of the photoresist layer to actinic radiation
- Development of the photoresist layer to remove the unexposed portion and part of the dehydrated film
- Etching the substrate using the exposed portion of the photoresist layer as a mask
Potential Applications: - Semiconductor manufacturing - Microelectronics industry
Problems Solved: - Precise patterning of semiconductor devices - Improved manufacturing processes
Benefits: - Enhanced accuracy in device fabrication - Increased efficiency in semiconductor production
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process This technology can be used in the production of various semiconductor devices, such as integrated circuits and microprocessors, leading to improved performance and reliability in electronic devices. The market implications include faster production cycles and higher quality products.
Questions about Semiconductor Device Manufacturing: 1. How does the selective exposure of the photoresist layer contribute to the manufacturing process?
- The selective exposure allows for precise patterning of the semiconductor device, ensuring accuracy in the final product.
2. What are the key advantages of using a dehydrated film in semiconductor manufacturing?
- The dehydrated film helps improve the resolution and quality of the semiconductor device by providing a stable surface for patterning.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.