Category:Seunggeol Nam of Suwon-si (KR)
Seunggeol Nam
Seunggeol Nam from Suwon-si (KR) has applied for patents in technology areas such as C30B29/38, H01L21/02 with samsung electronics co., ltd..
Patents
Pages in category "Seunggeol Nam of Suwon-si (KR)"
The following 22 pages are in this category, out of 22 total.
1
- 17953491. CONTENT-ADDRESSABLE MEMORY AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17964365. CAPACITOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17983856. SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17986237. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18053182. Ferroelectric Memory Device And Electronic Device Including The Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18055485. Hybrid Memory Device And Electronic Device Including Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18063936. NEURAL NETWORK DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18335492. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract (Samsung Electronics Co., Ltd.)
- 18340407. 3D FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340560. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18412793. SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER simplified abstract (Samsung Electronics Co., Ltd.)
- 18468394. THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18621853. NON-VOLATILE CONTENT ADDRESSABLE MEMORY DEVICE HAVING SIMPLE CELL CONFIGURATION AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18638923. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18895686. FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT DENSITY OF THE SAME (Samsung Electronics Co., Ltd.)
- 18942936. BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER (SAMSUNG ELECTRONICS CO., LTD.)
S
- Samsung electronics co., ltd. (20240096415). VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract
- Samsung electronics co., ltd. (20240244848). SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER simplified abstract
- Samsung electronics co., ltd. (20240260274). MEMORY DEVICE IMPLEMENTING MULTI-BIT AND MEMORY APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240265967). NON-VOLATILE CONTENT ADDRESSABLE MEMORY DEVICE HAVING SIMPLE CELL CONFIGURATION AND OPERATING METHOD OF THE SAME simplified abstract
- Samsung electronics co., ltd. (20240266445). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20250066950). BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER