18638923. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
Sangwook Kim of Seongnam-si (KR)
Kwanghee Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18638923 titled 'SEMICONDUCTOR DEVICE
The semiconductor apparatus described in the patent application consists of multiple semiconductor devices, each containing a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer sandwiched between two electrodes. The conductive metal oxide layer may be positioned between the ferroelectric layer and the semiconductor layer, all of which may contain a metal oxide material. Specifically, the conductive metal oxide layer may consist of materials such as indium oxide, zinc oxide, tin oxide, or a combination thereof.
- The semiconductor apparatus includes semiconductor devices with ferroelectric, conductive metal oxide, and semiconductor layers.
- The conductive metal oxide layer may be located between the ferroelectric and semiconductor layers.
- All layers in the semiconductor devices may contain a metal oxide material.
- The conductive metal oxide layer may consist of materials like indium oxide, zinc oxide, tin oxide, or a combination of these materials.
Potential Applications: This technology could be applied in memory devices, sensors, actuators, and other electronic devices that require high-performance semiconductor components.
Problems Solved: This innovation addresses the need for improved semiconductor devices with enhanced functionality and performance by incorporating specific layers of materials.
Benefits: The semiconductor apparatus offers increased efficiency, reliability, and functionality in various electronic applications due to the unique composition of its layers.
Commercial Applications: This technology could have significant commercial implications in the semiconductor industry, particularly in the development of advanced memory devices, sensors, and other electronic components.
Questions about the Semiconductor Apparatus: 1. How does the inclusion of a conductive metal oxide layer enhance the performance of the semiconductor devices? 2. What are the potential challenges in scaling up the production of semiconductor devices with these specific layers?
Original Abstract Submitted
A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.