Category:Leonard P. Guler of Hillsboro OR (US)
Leonard P. Guler
Leonard P. Guler from Hillsboro OR (US) has applied for patents in technology areas such as H01L27/088, H01L29/06, H01L29/423 with intel corporation.
Patents
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Pages in category "Leonard P. Guler of Hillsboro OR (US)"
The following 77 pages are in this category, out of 77 total.
1
- 17850778. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE simplified abstract (Intel Corporation)
- 17850779. INTEGRATED CIRCUIT STRUCTURE WITH RECESSED SELF-ALIGNED DEEP BOUNDARY VIA simplified abstract (Intel Corporation)
- 17936952. FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract (Intel Corporation)
- 17943443. GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT simplified abstract (Intel Corporation)
- 17949861. INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUG REMOVED FROM TRENCH CONTACT USING ANGLED DIRECTIONAL ETCH simplified abstract (Intel Corporation)
- 17956775. SPLIT VIA STRUCTURES COUPLED TO CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 17956779. INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract (Intel Corporation)
- 17957106. ETCH STOP LAYER FOR METAL GATE CUT simplified abstract (Intel Corporation)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)
- 17958285. WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958288. PLUG IN A METAL LAYER simplified abstract (Intel Corporation)
- 17958290. WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract (Intel Corporation)
- 17958291. PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 18088547. SELF-ALIGNED BACKBONE FOR FORKSHEET TRANSISTORS simplified abstract (Intel Corporation)
- 18121731. INTEGRATED CIRCUIT STRUCTURES HAVING SELF-ALIGNED UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG FOR TUB GATES simplified abstract (Intel Corporation)
- 18125430. SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS simplified abstract (Intel Corporation)
- 18125440. ISOLATED BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES simplified abstract (Intel Corporation)
- 18125447. GATE LINK ACROSS GATE CUT IN SEMICONDUCTOR DEVICES simplified abstract (Intel Corporation)
- 18125455. BRIDGING CONTACT STRUCTURES simplified abstract (Intel Corporation)
- 18125456. CONTACT EXTENDED OVER AN ADJACENT SOURCE OR DRAIN REGION simplified abstract (Intel Corporation)
- 18125880. CONSTRAINED EPITAXIAL FORMATION USING DIELECTRIC WALLS simplified abstract (Intel Corporation)
- 18215743. INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACER LINERS (Intel Corporation)
- 18215748. INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP (Intel Corporation)
- 18216325. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT DIFFERENTIATED ACCESS (Intel Corporation)
- 18216520. STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATERIALS (Intel Corporation)
- 18216914. CONDUCTIVE LINES HAVING CONDUCTIVE METAL LINER FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 18336323. TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIRECTED SELF-ASSEMBLY (Intel Corporation)
- 18437961. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract (Intel Corporation)
- 18455446. RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT (Intel Corporation)
- 18511604. NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation)
- 18622659. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES simplified abstract (Intel Corporation)
- 18752147. INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES simplified abstract (Intel Corporation)
I
- Intel corporation (20240105597). DIELECTRIC PLUGS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105598). DIFFERENTIATED CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105599). MUSHROOMED VIA STRUCTURES FOR TRENCH CONTACT OR GATE CONTACT simplified abstract
- Intel corporation (20240105716). INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG simplified abstract
- Intel corporation (20240105771). INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION simplified abstract
- Intel corporation (20240105774). INTEGRATED CIRCUIT STRUCTURES WITH UNIFORM EPITAXIAL SOURCE OR DRAIN CUT simplified abstract
- Intel corporation (20240105801). INTEGRATED CIRCUIT STRUCTURES WITH GATE VOLUME REDUCTION simplified abstract
- Intel corporation (20240105802). INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUGREMOVED FROM TRENCH CONTACT simplified abstract
- Intel corporation (20240105804). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS simplified abstract
- Intel corporation (20240113017). PLUG IN A METAL LAYER simplified abstract
- Intel corporation (20240113019). SPLIT VIA STRUCTURES COUPLED TO CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240113104). FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract
- Intel corporation (20240113106). ETCH STOP LAYER FOR METAL GATE CUT simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240113108). WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113109). PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113111). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract
- Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract
- Intel corporation (20240113177). STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract
- Intel corporation (20240113233). WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract
- Intel corporation (20240178226). FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract
- Intel corporation (20240203869). INTEGRATED CIRCUIT DEVICES WITH HYBRID METAL LINES simplified abstract
- Intel corporation (20240204083). DSA (DIRECTED SELF-ASSEMBLY) BASED SPACER AND LINER FOR SHORTING MARGIN OF VIA simplified abstract
- Intel corporation (20240213250). SELF-ALIGNED BACKBONE FOR FORKSHEET TRANSISTORS simplified abstract
- Intel corporation (20240243203). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES simplified abstract
- Intel corporation (20240312986). INTEGRATED CIRCUIT STRUCTURES HAVING SELF-ALIGNED UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG FOR TUB GATES simplified abstract
- Intel corporation (20240321685). SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS simplified abstract
- Intel corporation (20240321737). ISOLATED BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES simplified abstract
- Intel corporation (20240321738). BRIDGING CONTACT STRUCTURES simplified abstract
- Intel corporation (20240321872). GATE LINK ACROSS GATE CUT IN SEMICONDUCTOR DEVICES simplified abstract
- Intel corporation (20240321892). CONSTRAINED EPITAXIAL FORMATION USING DIELECTRIC WALLS simplified abstract
- Intel corporation (20240321978). CONTACT EXTENDED OVER AN ADJACENT SOURCE OR DRAIN REGION simplified abstract
- Intel corporation (20240332389). PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON DEVICES simplified abstract
- Intel corporation (20240347539). INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES simplified abstract
- Intel corporation (20240355890). CONDUCTIVE BRIDGE THROUGH DIELECTRIC WALL BETWEEN SOURCE OR DRAIN CONTACTS simplified abstract
- Intel corporation (20240355891). CONDUCTIVE BRIDGE THROUGH DIELECTRIC WALL BETWEEN SOURCE OR DRAIN CONTACTS simplified abstract
- Intel corporation (20240355903). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES ABOVE INSULATOR SUBSTRATES simplified abstract
- Intel corporation (20240355915). BACKSIDE CONDUCTIVE STRUCTURES EXTENDING THROUGH INTEGRATED CIRCUIT TO MEET FRONTSIDE CONTACTS simplified abstract
- Intel corporation (20240421201). TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIRECTED SELF-ASSEMBLY
- Intel corporation (20240429125). INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR ISOLATION
- Intel corporation (20240429276). FORKSHEET DEVICES WITH DIELECTRIC SPINE AT CELL BOUNDARY
- Intel corporation (20250072069). RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT
- Intel corporation (20250081597). INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG