Category:Jiahui Yuan of Fremont CA (US)
Appearance
Jiahui Yuan of Fremont CA (US)
Executive Summary
Jiahui Yuan of Fremont CA (US) is an inventor who has filed 10 patents. Their primary areas of innovation include STATIC STORES (semiconductor memory devices (3 patents), {Circuits or methods to verify correct programming of nonvolatile memory cells} (2 patents), {comprising cells containing a single floating gate transistor and one or more separate select transistors} (2 patents), and they have worked with companies such as Western Digital Technologies, Inc. (10 patents). Their most frequent collaborators include (2 collaborations), (2 collaborations), (2 collaborations).
Patent Filing Activity
Technology Areas
List of Technology Areas
- G11C16/16 (STATIC STORES (semiconductor memory devices): 3 patents
- G11C16/3459 ({Circuits or methods to verify correct programming of nonvolatile memory cells}): 2 patents
- G11C16/0433 ({comprising cells containing a single floating gate transistor and one or more separate select transistors}): 2 patents
- G11C16/28 (STATIC STORES (semiconductor memory devices): 2 patents
- G11C29/46 (STATIC STORES (semiconductor memory devices): 2 patents
- G11C16/3445 ({Circuits or methods to verify correct erasure of nonvolatile memory cells}): 2 patents
- G11C16/08 (Address circuits; Decoders; Word-line control circuits): 2 patents
- G11C16/26 (Sensing or reading circuits; Data output circuits): 2 patents
- G11C7/04 (with means for avoiding disturbances due to temperature effects): 1 patents
- G11C29/18 (STATIC STORES (semiconductor memory devices): 1 patents
- G11C2029/1202 (STATIC STORES (semiconductor memory devices): 1 patents
- G06F3/0608 ({Saving storage space on storage systems}): 1 patents
- G06F3/0652 ({Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket}): 1 patents
- G06F3/0679 ({Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]}): 1 patents
- G11C29/12005 (STATIC STORES (semiconductor memory devices): 1 patents
- G11C29/1201 (STATIC STORES (semiconductor memory devices): 1 patents
- G11C16/12 (Programming voltage switching circuits): 1 patents
- G11C16/32 (Timing circuits): 1 patents
- G06F12/0246 ({in block erasable memory, e.g. flash memory}): 1 patents
- G06F2212/7201 (ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models): 1 patents
- G11C16/102 (Programming or data input circuits): 1 patents
- G11C16/20 (Initialising; Data preset; Chip identification): 1 patents
- G11C16/0483 ({comprising cells having several storage transistors connected in series}): 1 patents
Companies
List of Companies
- Western Digital Technologies, Inc.: 10 patents
Collaborators
- Abu Naser Zainuddin of Milpitas CA (US) (2 collaborations)
- Sai Gautham Thoppa of San Jose CA (US) (2 collaborations)
- Ken Oowada (2 collaborations)
- Deepanshu Dutta of Fremont CA (US) (2 collaborations)
- Abhijith Prakash of Milpitas CA (US) (1 collaborations)
- Xiang Yang of Santa Clara CA (US) (1 collaborations)
- Liang Li (1 collaborations)
- Xuan Tian (1 collaborations)
- Ming Wang (1 collaborations)
- Lito De La Rama of San Jose CA (US) (1 collaborations)
- Albert Bor Kai Chen of Milpitas CA (US) (1 collaborations)
- Jiacen Guo of Sunnyvale CA (US) (1 collaborations)
- Yi Song of San Jose CA (US) (1 collaborations)
- Henry Chin of Fremont CA (US) (1 collaborations)
- Changyuan Chen of San Ramon CA (US) (1 collaborations)
Subcategories
This category has the following 7 subcategories, out of 7 total.
A
H
J
L
M
S
X
Pages in category "Jiahui Yuan of Fremont CA (US)"
The following 8 pages are in this category, out of 8 total.
1
- 18355339. ADAPTIVE ERASE VOLTAGES FOR NON-VOLATILE MEMORY simplified abstract (SanDisk Technologies LLC)
- 18357274. NON-VOLATILE MEMORY WITH SMART CONTROL OF OVERDRIVE VOLTAGE simplified abstract (SanDisk Technologies LLC)
- 18357339. NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE simplified abstract (SanDisk Technologies LLC)
- 18357354. NON-VOLATILE MEMORY THAT DYNAMICALLY REDUCES THE NUMBER OF BITS OF DATA STORED PER MEMORY CELL simplified abstract (Western Digital Technologies, Inc.)
- 18357489. NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY simplified abstract (SanDisk Technologies LLC)
- 18359819. NON-VOLATILE MEMORY WITH SECURE ERASE simplified abstract (Western Digital Technologies, Inc.)
- 18454253. NON-VOLATILE MEMORY BITMAP FOR GARBAGE COLLECTION (Western Digital Technologies, Inc.)
Categories:
- Abu Naser Zainuddin of Milpitas CA (US)
- Sai Gautham Thoppa of San Jose CA (US)
- Ken Oowada
- Deepanshu Dutta of Fremont CA (US)
- Abhijith Prakash of Milpitas CA (US)
- Xiang Yang of Santa Clara CA (US)
- Liang Li
- Xuan Tian
- Ming Wang
- Lito De La Rama of San Jose CA (US)
- Albert Bor Kai Chen of Milpitas CA (US)
- Jiacen Guo of Sunnyvale CA (US)
- Yi Song of San Jose CA (US)
- Henry Chin of Fremont CA (US)
- Changyuan Chen of San Ramon CA (US)
- Jiahui Yuan of Fremont CA (US)
- Inventors
- Inventors filing patents with Western Digital Technologies, Inc.