Category:Jhon Jhy Liaw of Hsinchu County (TW)
Jhon Jhy Liaw
Jhon Jhy Liaw from Hsinchu County (TW) has applied for patents in technology areas such as H01L29/775, H01L21/8238, H01L21/84 with taiwan semiconductor manufacturing company, ltd..
Patents
Pages in category "Jhon Jhy Liaw of Hsinchu County (TW)"
The following 55 pages are in this category, out of 55 total.
1
- 17384092. Dielectric Fin Structures With Varying Height simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17876044. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17900639. Performance Optimization By Sizing Gates And Source/Drain Contacts Differently For Different Transistors simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18149215. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149566. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151624. Integrated Circuits With Contacting Gate Structures simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152169. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18157607. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18167169. TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18193052. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18335380. Source/Drain Contacts and Methods for Forming the Same (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18346272. SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18405160. MEMORY CELL STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18453688. INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18522727. Integrated Standard Cell Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18623885. MULTI-GATE DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18639739. GATE SPACERS AND METHODS OF FORMING THE SAME IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18666465. SEMICONDUCTOR DEVICE WITH GATE RECESS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669059. ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS AND METHOD OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18674249. REDUCING PARASITIC CAPACITANCE IN FIELD-EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18755298. FUSE CELL STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240186311). DUAL-PORT SRAM STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194567). SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222430). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224486). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250027). SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312832). REDUCING PARASITIC CAPACITANCE IN FIELD-EFFECT TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313072). ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS AND METHOD OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240421200). Source/Drain Contacts and Methods for Forming the Same
- Taiwan semiconductor manufacturing company, ltd. (20240105257). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105258). MEMORY DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113097). Integrated Standard Cell Structure simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113165). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120377). TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240138135). MEMORY CELL STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240243127). MULTI-GATE DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266224). GATE SPACERS AND METHODS OF FORMING THE SAME IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240292591). MEMORY DEVICES WITH GATE ALL AROUND TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240306360). SEMICONDUCTOR DEVICE WITH GATE RECESS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240349495). FUSE CELL STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379445). Methods for Fabricating FinFETs Having Different Fin Numbers and Corresponding FinFETs Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379460). INTERCONNECT STRUCTURE FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379546). Via Structures simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379677). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379681). Multi-Gate Device Integration with Separated Fin-Like Field Effect Transistor Cells and Gate-All-Around Transistor Cells simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379763). Fin-Like Field Effect Transistors Having High Mobility Strained Channels and Methods of Fabrication Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379859). Device Structure with Reduced Leakage Current simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240380402). Semiconductor Device For Logic and Memory Co-Optimization simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381607). Multi-Gate Field-Effect Transistors In Integrated Circuits simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381611). GATE-ALL-AROUND HIGH-DENSITY AND HIGH-SPEED SRAM CELLS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250072031). INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME
U
- US Patent Application 18338609. FinFET Devices with Dummy Fins Having Multiple Dielectric Layers simplified abstract
- US Patent Application 18360118. Multi-Gate Device Integration with Separated Fin-Like Field Effect Transistor Cells and Gate-All-Around Transistor Cells simplified abstract
- US Patent Application 18360166. Semiconductor Devices Having Gate Dielectric Layers of Varying Thicknesses and Methods of Forming the Same simplified abstract
- US Patent Application 18361122. Methods for Fabricating FinFETs Having Different Fin Numbers and Corresponding FinFETs Thereof simplified abstract