MULTI-GATE DEVICE STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

MULTI-GATE DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240243127 titled 'MULTI-GATE DEVICE STRUCTURE

The semiconductor device described in this patent application consists of two transistors, each with specific components such as channel members, gate structures, and source/drain contacts.

The first transistor includes first channel members between a first and a second source/drain feature, a first gate structure wrapping around the first channel members, a first source/drain contact, and a first top gate spacer.
The second transistor includes second channel members between a third and a fourth source/drain features, a second gate structure wrapping around the second channel members, a second source/drain contact, and a second top gate spacer.
The distance between the second gate spacer and the second source/drain contact is greater than the distance between the first gate spacer and the first source/drain contact.

Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance integrated circuits.

Problems Solved: - This innovation addresses the need for improved performance and efficiency in semiconductor devices. - It helps in enhancing the functionality and reliability of transistors in electronic devices.

Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced reliability and functionality of transistors. - Potential for the development of more advanced electronic products.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of high-speed processors, memory chips, and other electronic components for consumer electronics, telecommunications, and computing industries.

Questions about the technology: 1. How does the distance between the gate spacer and the source/drain contact impact the performance of the transistors? 2. What are the specific advantages of having different distances in the two transistors in the semiconductor device?

Original Abstract Submitted

a semiconductor device according to the present disclosure includes a first transistor and a second transistor. the first transistor includes first channel members between a first and a second source/drain feature, a first gate structure wrapping around the first channel members, a first source/drain contact disposed over the first source/drain feature, and a first top gate spacer disposed between the first gate structure and the first source/drain contact. the second transistor includes second channel members between a third and a fourth source/drain features, a second gate structure wrapping around the second channel members, a second source/drain contact disposed over the third source/drain feature, and a second top gate spacer disposed between the second gate structure and the second source/drain contact. a distance between the second gate spacer and the second source/drain contact is greater than a distance between the first gate spacer and the first source/drain contact.