MULTI-GATE DEVICE STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

MULTI-GATE DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18623885 titled 'MULTI-GATE DEVICE STRUCTURE

The semiconductor device described in the abstract consists of two transistors, each with specific components and structures.

The first transistor includes channel members, gate structure, source/drain features, source/drain contact, and top gate spacer.
The second transistor also includes channel members, gate structure, source/drain features, source/drain contact, and top gate spacer.
The distance between the gate spacer and the source/drain contact is greater in the second transistor compared to the first transistor.

Potential Applications: - This technology can be used in the development of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.

Problems Solved: - Provides improved control and functionality in semiconductor devices. - Enhances the overall performance and reliability of electronic systems.

Benefits: - Increased efficiency and performance of electronic devices. - Better control and functionality in semiconductor components. - Potential for advancements in the field of integrated circuits and electronic systems.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be integrated into industrial applications for improved efficiency and functionality.

Questions about the technology: 1. How does the distance between the gate spacer and the source/drain contact impact the performance of the transistors? 2. What are the specific advantages of having different distances in the two transistors of the semiconductor device?

Original Abstract Submitted

A semiconductor device according to the present disclosure includes a first transistor and a second transistor. The first transistor includes first channel members between a first and a second source/drain feature, a first gate structure wrapping around the first channel members, a first source/drain contact disposed over the first source/drain feature, and a first top gate spacer disposed between the first gate structure and the first source/drain contact. The second transistor includes second channel members between a third and a fourth source/drain features, a second gate structure wrapping around the second channel members, a second source/drain contact disposed over the third source/drain feature, and a second top gate spacer disposed between the second gate structure and the second source/drain contact. A distance between the second gate spacer and the second source/drain contact is greater than a distance between the first gate spacer and the first source/drain contact.