EMBEDDED DEEP TRENCH CAPACITORS IN INTEGRATED CIRCUIT DEVICE PACKAGE SUBSTRATES

Abstract: an apparatus is provided which comprises: a substrate core comprising a first core layer and a second core layer, one or more redistribution layers on a first substrate core surface, one or more conductive contacts on a second substrate core surface opposite the first substrate core surface, one or more vias through the substrate core, a first circuit component embedded entirely within a cavity in the first core layer, the first circuit component coupled with a first redistribution layers surface, wherein the first circuit component and the first core layer have substantially equivalent heights, and a second circuit component embedded entirely within a cavity in the second core layer, wherein the second circuit component and the second core layer have substantially equivalent heights. other embodiments are also disclosed and claimed.

Inventor(s): Mahdi Mohammadighaleni, Shayan Kaviani, Ehsan Zamani, Joshua Stacey, Whitney Bryks, Kihyun Kim, Srinivas Pietambaram, Dilan Seneviratne, Elham Tavakoli

CPC Classification: H01L23/5223 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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