18374573. IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES (INTEL CORPORATION)
IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES
Organization Name
Inventor(s)
Adel Elsherbini of Chandler AZ US
Veronica Strong of Hillsboro OR US
Thomas Sounart of Chandler AZ US
IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES
This abstract first appeared for US patent application 18374573 titled 'IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES
Original Abstract Submitted
A surface finish on an integrated circuit (IC) die structure or a substrate structure to which an IC die structure is to be bonded has a chemical composition distinct from that of underlying metallization. The surface finish may comprise a CuâNi alloy. Optionally, the CuâNi alloy may further comprise Mn. Alternatively, the surface finish may comprise a noble metal, such as Pd, Pt, or Ru or may comprise self-assembled monolayer (SAM) molecules comprising Si and C. During the bonding process a biphilic surface on the IC die structure or substrate structure may facilitate liquid droplet-based fine alignment of the IC die structure to a host structure. Prior to bonding, the surface finish may be applied upon a top surface of metallization features and may inhibit oxidation of the top surface exposed to the liquid droplet.