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18374573. IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES (INTEL CORPORATION)

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IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES

Organization Name

INTEL CORPORATION

Inventor(s)

Kimin Jun of Portland OR US

Feras Eid of Chandler AZ US

Adel Elsherbini of Chandler AZ US

Veronica Strong of Hillsboro OR US

Thomas Sounart of Chandler AZ US

IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES

This abstract first appeared for US patent application 18374573 titled 'IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES

Original Abstract Submitted

A surface finish on an integrated circuit (IC) die structure or a substrate structure to which an IC die structure is to be bonded has a chemical composition distinct from that of underlying metallization. The surface finish may comprise a Cu—Ni alloy. Optionally, the Cu—Ni alloy may further comprise Mn. Alternatively, the surface finish may comprise a noble metal, such as Pd, Pt, or Ru or may comprise self-assembled monolayer (SAM) molecules comprising Si and C. During the bonding process a biphilic surface on the IC die structure or substrate structure may facilitate liquid droplet-based fine alignment of the IC die structure to a host structure. Prior to bonding, the surface finish may be applied upon a top surface of metallization features and may inhibit oxidation of the top surface exposed to the liquid droplet.

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