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Category:H10N52/80
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Pages in category "H10N52/80"
The following 6 pages are in this category, out of 6 total.
1
- 18050600. MAGNETIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18513968. MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
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- US Patent Application 18231414. SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF simplified abstract
- US Patent Application 18232256. Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices simplified abstract
- US Patent Application 18447912. MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM simplified abstract
