US Patent Application 18232256. Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices simplified abstract

Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices

Organization Name

Western Digital Technologies, Inc.

Inventor(s)

Quang Le of San Jose CA (US)

Brian R. York of San Jose CA (US)

Cherngye Hwang of San Jose CA (US)

Susumu Okamura of San Jose CA (US)

Michael A. Gribelyuk of San Jose CA (US)

Xiaoyong Liu of San Jose CA (US)

Kuok San Ho of Emerald Hills CA (US)

Hisashi Takano of Fujisawa-shi (JP)

Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232256 titled 'Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices

Simplified Explanation

- The patent application is about spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices. - These devices consist of a buffer layer, a bismuth antimony (BiSb) layer with a (012) orientation, and an interlayer. - The buffer layer and interlayer can be single layers or multilayers of different materials. - The buffer layer and interlayer are made of materials that prevent antimony (Sb) migration within the BiSb layer. - They also enhance the uniformity of the BiSb layer and promote the desired (012) orientation. - The innovation aims to improve the performance and stability of SOT MTJ devices.

Original Abstract Submitted

The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.