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Category:H10B53/20
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Pages in category "H10B53/20"
The following 6 pages are in this category, out of 6 total.
1
- 18203877. TECHNIQUES TO MANUFACTURE FERROELECTRIC MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18204773. FORMATION FOR MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18340407. 3D FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340560. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18511461. FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
