18340407. 3D FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
3D FERROELECTRIC MEMORY DEVICE
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
3D FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18340407 titled '3D FERROELECTRIC MEMORY DEVICE
Simplified Explanation
The abstract describes a 3D ferroelectric memory device consisting of multiple stacked gate electrodes, ferroelectric layers, intermediate electrodes, insulating layers, and a channel layer.
- The device includes gate electrodes stacked on a substrate in one direction.
- Ferroelectric layers are placed on the gate electrodes in another direction.
- Intermediate electrodes are added on the ferroelectric layers in the same direction as the ferroelectric layers.
- A first insulating layer is placed between the gate electrodes and the intermediate electrodes.
- A second insulating layer is added on top of the intermediate electrodes and the first insulating layer.
- A channel layer is placed on the second insulating layer.
Potential applications of this technology:
- Memory devices: The 3D ferroelectric memory device can be used in various memory applications due to its stacked structure and ferroelectric properties.
- Data storage: The device can be utilized for storing and retrieving data in electronic devices, providing high-density storage capabilities.
- Non-volatile memory: The ferroelectric memory device can retain stored data even when power is turned off, making it suitable for non-volatile memory applications.
Problems solved by this technology:
- Increased storage capacity: The 3D structure allows for stacking multiple layers, increasing the memory capacity of the device.
- Improved data retention: The ferroelectric layers provide enhanced data retention capabilities, ensuring stored information is preserved for longer periods.
- Reduced power consumption: The non-volatile nature of the memory device reduces the need for constant power supply, resulting in lower power consumption.
Benefits of this technology:
- High-density storage: The stacked structure and ferroelectric layers enable the device to achieve high-density data storage, maximizing storage capacity.
- Improved performance: The use of ferroelectric materials enhances the device's performance by providing faster read and write operations.
- Energy efficiency: The non-volatile nature and reduced power consumption contribute to energy-efficient operation, prolonging battery life in portable devices.
Original Abstract Submitted
Provided is a 3D ferroelectric memory device. The 3D ferroelectric memory device may include a plurality of gate electrodes stacked on a substrate in a first direction; a plurality of ferroelectric layers on the plurality of gate electrodes in a second direction; a plurality of intermediate electrodes on the plurality of ferroelectric layers in the second direction; a first insulating layer between the plurality of gate electrodes and between the plurality of intermediate electrodes; a second insulating layer on the plurality of intermediate electrodes and the first insulating layer; and a channel layer on the second insulating layer.
