18511461. FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
FERROELECTRIC MEMORY CELL
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chung-Liang Cheng of Changhua (TW)
Huang-Lin Chao of Hillsboro OR (US)
FERROELECTRIC MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18511461 titled 'FERROELECTRIC MEMORY CELL
Simplified Explanation
The abstract describes a patent application for a ferroelectric memory cell (FeRAM) that integrates an active device (e.g., a transistor) and a passive device (e.g., a ferroelectric capacitor) in a substrate. The transistor and its gate contacts are located on the front side of the substrate, while a carrier wafer can be bonded to the active device to allow for inversion, enabling the passive device and associated contacts to be electrically coupled from the back side of the substrate.
- The FeRAM includes an active device (transistor) and a passive device (ferroelectric capacitor) integrated in a substrate.
- The transistor and gate contacts are formed on the front side of the substrate.
- A carrier wafer can be bonded to the active device to allow for inversion, enabling electrical coupling of the passive device from the back side of the substrate.
Potential Applications
- Memory storage in electronic devices
- Embedded systems
- IoT devices
Problems Solved
- Improved data retention and reliability in memory cells
- Enhanced performance in electronic devices
- Increased efficiency in memory storage
Benefits
- Higher data retention capabilities
- Faster access times
- Improved overall performance of electronic devices
Original Abstract Submitted
A ferroelectric memory cell (FeRAM) is disclosed that includes an active device (e.g., a transistor) and a passive device (e.g., a ferroelectric capacitor) integrated in a substrate. The transistor and its gate contacts are formed on a front side of the substrate. A carrier wafer can be bonded to the active device to allow the active device to be inverted so that the passive device and associated contacts can be electrically coupled from a back side of the substrate.
