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Category:H01L29/41
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Pages in category "H01L29/41"
The following 8 pages are in this category, out of 8 total.
1
- 17542322. SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17829679. WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18483058. TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18515148. SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518142. SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
