18515148. SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yun-Yuan Wang of Kaohsiung City (TW)
Chih-Hsiang Hsiao of Taoyuan City (TW)
I-Chih Ni of New Taipei City (TW)
SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18515148 titled 'SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER
Simplified Explanation
The patent application describes a device with a chalcogenide channel layer, a chalcogenide barrier layer, source/drain contacts, and a gate electrode.
- The chalcogenide channel layer is positioned on top of the substrate.
- The chalcogenide barrier layer is placed over the chalcogenide channel layer.
- The dopant concentration of the chalcogenide barrier layer is higher than that of the chalcogenide channel layer.
- The source/drain contacts are located on the chalcogenide channel layer.
- The gate electrode is positioned over the substrate.
Potential Applications
- Semiconductor devices
- Memory storage devices
- Logic circuits
Problems Solved
- Improved performance of semiconductor devices
- Enhanced memory storage capabilities
- Increased efficiency of logic circuits
Benefits
- Higher dopant concentration in the barrier layer improves device performance
- Optimal positioning of layers enhances overall functionality
- Increased reliability and durability of the device
Original Abstract Submitted
A device includes a substrate, a chalcogenide channel layer, a chalcogenide barrier layer, source/drain contacts, and a gate electrode. The chalcogenide channel layer is over the substrate. The chalcogenide barrier layer is over the chalcogenide channel layer. A dopant concentration of the chalcogenide barrier layer is greater than a dopant concentration of the chalcogenide channel layer. The source/drain contacts are over the chalcogenide channel layer. The gate electrode is over the substrate.
