17829679. WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Keunwook Shin of Yongin-si (KR)

Kibum Kim of Seoul (KR)

Kyung-Eun Byun of Seongnam-si (KR)

Hyeonjin Shin of Suwon-si (KR)

Minhyun Lee of Suwon-si (KR)

Changseok Lee of Gwacheon-si (KR)

WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17829679 titled 'WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes a patent application for a wiring that includes a layer of graphene and a method of manufacturing this wiring. The method involves growing a graphene layer on a substrate and doping it with a metal. The graphene layer is grown using a plasma of a hydrocarbon at a temperature ranging from 200°C to 600°C using plasma enhanced chemical vapor deposition (PECVD).

  • The patent application describes a wiring that incorporates a layer of graphene.
  • The method of manufacturing the wiring involves growing the graphene layer on a substrate.
  • The graphene layer is doped with a metal to enhance its properties.
  • The growth of the graphene layer is achieved using a plasma of a hydrocarbon.
  • The process utilizes plasma enhanced chemical vapor deposition (PECVD) at a temperature between 200°C and 600°C.

Potential Applications

  • Electronics: The graphene wiring can be used in various electronic devices, such as smartphones, computers, and sensors.
  • Energy Storage: Graphene-based wiring can be utilized in batteries and supercapacitors, improving their performance and efficiency.
  • Aerospace: The lightweight and conductive nature of graphene wiring make it suitable for aerospace applications, including aircraft and satellites.

Problems Solved

  • Improved Conductivity: Graphene's exceptional electrical conductivity addresses the limitations of traditional wiring materials, leading to more efficient electrical transmission.
  • Enhanced Durability: Graphene's strength and flexibility make it resistant to damage and wear, ensuring the longevity of the wiring.
  • Miniaturization: Graphene's thinness allows for the creation of ultra-thin and flexible wiring, enabling advancements in miniaturization of electronic devices.

Benefits

  • Higher Performance: The use of graphene in wiring improves electrical conductivity, leading to faster and more efficient electronic devices.
  • Cost-Effectiveness: The manufacturing method described in the patent application utilizes plasma enhanced chemical vapor deposition, which can be a cost-effective process.
  • Versatility: Graphene wiring can be applied in various industries and devices due to its unique properties, opening up new possibilities for technological advancements.


Original Abstract Submitted

Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).