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• 18964266. PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN (Taiwan Semiconductor Manufacturing Co., Ltd.)
  [[Category:G03F7/004]] [[Category:G03F7/038]]
  1 KB (179 words) - 04:52, 24 March 2025
• 18829508. RESIST COMPOSITION AND PATTERN FORMING PROCESS (SHIN-ETSU CHEMICAL CO., LTD.)
  [[Category:G03F7/004]] [[Category:G03F7/038]]
  1 KB (155 words) - 07:31, 31 March 2025
• US Patent Application 18232717. PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN simplified abstract
  [[Category:G03F7/11]] [[Category:G03F7/004]]
  2 KB (308 words) - 15:10, 30 November 2023
• US Patent Application 18232774. UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
  [[Category:G03F7/039]] [[Category:G03F7/004]]
  2 KB (278 words) - 15:10, 30 November 2023
• Taiwan semiconductor manufacturing co., ltd. (20250093775). PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
  [[Category:G03F7/004]] [[Category:G03F7/038]]
  2 KB (255 words) - 03:30, 24 March 2025
• Taiwan semiconductor manufacturing co., ltd. (20240419069). PHOTO LIGAND DESIGN FOR EUV OR E-BEAM METALLIC PHOTORESISTS
  [[Category:G03F7/004]] [[Category:G03F7/075]]
  2 KB (226 words) - 06:47, 19 December 2024
• 18335852. PHOTO LIGAND DESIGN FOR EUV OR E-BEAM METALLIC PHOTORESISTS (Taiwan Semiconductor Manufacturing Co., Ltd.)
  [[Category:G03F7/004]] [[Category:G03F7/075]]
  2 KB (226 words) - 07:16, 19 December 2024
• 18609833. PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
  [[Category:G03F7/039]] [[Category:G03F7/004]]
  3 KB (357 words) - 15:20, 22 August 2024
• Taiwan semiconductor manufacturing company, ltd. (20240280903). PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
  [[Category:G03F7/039]] [[Category:G03F7/004]]
  3 KB (393 words) - 07:06, 22 August 2024
• US Patent Application 18447441. PHOTORESIST WITH POLAR-ACID-LABILE-GROUP simplified abstract
  [[Category:G03F7/38]] [[Category:G03F7/039]]
  2 KB (294 words) - 08:34, 6 December 2023
• US Patent Application 18232264. PHOTORESIST COMPOSITION AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
  [[Category:G03F7/004]] [[Category:G03F7/20]]
  2 KB (301 words) - 15:09, 30 November 2023
• Taiwan semiconductor manufacturing co., ltd. (20250085631). PHOTORESIST UNDERLAYER MATERIALS AND ASSOCIATED METHODS
  [[Category:G03F7/039]] [[Category:G03F7/09]]
  2 KB (287 words) - 02:45, 15 March 2025
• 18404434. PHOTORESIST UNDERLAYER MATERIALS AND ASSOCIATED METHODS (Taiwan Semiconductor Manufacturing Co., Ltd.)
  [[Category:G03F7/039]] [[Category:G03F7/09]]
  2 KB (287 words) - 04:05, 15 March 2025
• Taiwan semiconductor manufacturing co., ltd. (20250102916). Photoresist and Method
  [[Category:G03F7/09]] [[Category:G03F7/16]]
  2 KB (267 words) - 03:47, 30 March 2025
• 18973300. Photoresist and Method (Taiwan Semiconductor Manufacturing Co., Ltd.)
  [[Category:G03F7/09]] [[Category:G03F7/16]]
  2 KB (267 words) - 04:45, 31 March 2025
• US Patent Application 18361402. BOTTOM ANTIREFLECTIVE COATING MATERIALS simplified abstract
  [[Category:G03F7/09]] [[Category:G03F7/11]]
  3 KB (451 words) - 04:02, 4 December 2023
• Taiwan semiconductor manufacturing company, ltd. (20240377743). BOTTOM ANTIREFLECTIVE COATING MATERIALS simplified abstract
  [[Category:G03F7/09]] [[Category:G03F7/038]]
  4 KB (495 words) - 06:48, 21 November 2024
• Samsung electronics co., ltd. (20250004370). POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE RESIST COMPOSITION
  [[Category:G03F7/038]] [[Category:G03F7/004]]
  2 KB (230 words) - 03:28, 25 March 2025
• US Patent Application 18339622. LAMINATE OF NEGATIVE TONE LITHOGRAPHIC PRINTING PLATE PRECURSOR AND METHOD OF PREPARING NEGATIVE TONE LITHOGRAPHIC PRINTING PLATE simplified abstract
  ...rared absorber layer has an arithmetic mean height (Sa) between 0.3 μm and 20 μm. ...n infrared absorber has an arithmetic mean height Sa of 0.3 μm or more and 20 μm or less. The present invention also provides a method of preparing a ne
  2 KB (314 words) - 07:09, 4 December 2023
• 18392365. POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE RESIST COMPOSITION (SAMSUNG ELECTRONICS CO., LTD.)
  [[Category:G03F7/038]] [[Category:G03F7/004]]
  2 KB (259 words) - 10:20, 17 February 2025

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