US Patent Application 18447441. PHOTORESIST WITH POLAR-ACID-LABILE-GROUP simplified abstract
Contents
PHOTORESIST WITH POLAR-ACID-LABILE-GROUP
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
An-Ren Zi of Hsinchu City (TW)
Ching-Yu Chang of Hsin-Chu (TW)
PHOTORESIST WITH POLAR-ACID-LABILE-GROUP - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447441 titled 'PHOTORESIST WITH POLAR-ACID-LABILE-GROUP
Simplified Explanation
- The patent application describes a method for making a semiconductor device. - The method involves using a photoresist, which is a material that is sensitive to light. - The photoresist used in this method contains an acid-labile group (ALG) connected to a polar unit. - The method includes several steps: forming the photoresist over a substrate, exposing the photoresist to a radiation beam, baking the photoresist, and performing a developing process. - The purpose of the radiation beam exposure is to create a pattern on the photoresist. - Baking the photoresist helps to stabilize the pattern. - The developing process is used to remove the parts of the photoresist that were not exposed to the radiation beam, leaving behind the desired pattern. - This method can be used in the manufacturing of semiconductor devices.
Original Abstract Submitted
Methods and materials for making a semiconductor device are described. The method includes forming a photoresist over a substrate. The photoresist includes an acid-labile group (ALG) connected to a polar unit. The method also includes exposing the photoresist to a radiation beam, baking the photoresist and performing a developing process to the photoresist.
