US Patent Application 18232717. PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN simplified abstract

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PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

An-Ren Zi of Hsinchu City (TW)

Chin-Hsiang Lin of Hsinchu (TW)

Ching-Yu Chang of Yuansun Village (TW)

PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232717 titled 'PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor device using a specific type of photoresist composition.

  • The method involves applying a photoresist under-layer composition over a semiconductor substrate.
  • A photoresist layer composition is then applied over the photoresist under-layer.
  • The photoresist layer is selectively exposed to actinic radiation and developed to create a pattern.
  • The photoresist under-layer composition includes a polymer with acid-labile groups, a polymer with crosslinking groups, or a polymer with carboxylic acid groups.
  • It also includes an acid generator and a solvent.
  • The photoresist composition includes a polymer, a photoactive compound, and a solvent.
  • This method allows for precise patterning of the semiconductor device during manufacturing.


Original Abstract Submitted

A method of manufacturing a semiconductor device includes forming a photoresist under-layer including a photoresist under-layer composition over a semiconductor substrate, and forming a photoresist layer including a photoresist composition over the photoresist under-layer. The photoresist layer is selectively exposed to actinic radiation and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist under-layer composition includes a polymer having pendant acid-labile groups, a polymer having crosslinking groups or a polymer having pendant carboxylic acid groups, an acid generator, and a solvent. The photoresist composition includes a polymer, a photoactive compound, and a solvent.

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