Search results

• 18964266. PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN (Taiwan Semiconductor Manufacturing Co., Ltd.)
  [[Category:G03F7/004]] [[Category:G03F7/038]]
  1 KB (179 words) - 04:52, 24 March 2025
• 18829508. RESIST COMPOSITION AND PATTERN FORMING PROCESS (SHIN-ETSU CHEMICAL CO., LTD.)
  [[Category:G03F7/004]] [[Category:G03F7/038]]
  1 KB (155 words) - 07:31, 31 March 2025
• Taiwan semiconductor manufacturing company, ltd. (20250068075). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
  [[Category:G03F7/09]] [[Category:G03F7/004]]
  1 KB (168 words) - 07:44, 17 March 2025
• 18941798. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Company, LTD.)
  [[Category:G03F7/09]] [[Category:G03F7/004]]
  1 KB (168 words) - 09:27, 17 March 2025
• 18829435. RESIST COMPOSITION AND PATTERN FORMING PROCESS (SHIN-ETSU CHEMICAL CO., LTD.)
  [[Category:G03F7/004]] [[Category:G03F7/00]]
  1 KB (172 words) - 07:31, 31 March 2025
• US Patent Application 18232717. PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN simplified abstract
  [[Category:G03F7/11]] [[Category:G03F7/004]]
  2 KB (308 words) - 15:10, 30 November 2023
• US Patent Application 18232774. UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
  [[Category:G03F7/039]] [[Category:G03F7/004]]
  2 KB (278 words) - 15:10, 30 November 2023
• Fujifilm corporation (20250004374). ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  [[Category:G03F7/039]] [[Category:G03F7/004]]
  1 KB (134 words) - 04:24, 25 March 2025
• Taiwan semiconductor manufacturing co., ltd. (20250093775). PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
  [[Category:G03F7/004]] [[Category:G03F7/038]]
  2 KB (255 words) - 03:30, 24 March 2025
• Taiwan semiconductor manufacturing co., ltd. (20240419069). PHOTO LIGAND DESIGN FOR EUV OR E-BEAM METALLIC PHOTORESISTS
  [[Category:G03F7/004]] [[Category:G03F7/075]]
  2 KB (226 words) - 06:47, 19 December 2024
• 18335852. PHOTO LIGAND DESIGN FOR EUV OR E-BEAM METALLIC PHOTORESISTS (Taiwan Semiconductor Manufacturing Co., Ltd.)
  [[Category:G03F7/004]] [[Category:G03F7/075]]
  2 KB (226 words) - 07:16, 19 December 2024
• Taiwan semiconductor manufacturing co., ltd. (20250093779). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
  [[Category:G03F7/09]] [[Category:G03F7/004]]
  1 KB (173 words) - 03:30, 24 March 2025
• 18961391. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)
  [[Category:G03F7/09]] [[Category:G03F7/004]]
  1 KB (173 words) - 04:52, 24 March 2025
• 18609833. PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
  [[Category:G03F7/039]] [[Category:G03F7/004]]
  3 KB (357 words) - 15:20, 22 August 2024
• US Patent Application 18232264. PHOTORESIST COMPOSITION AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
  [[Category:G03F7/004]] [[Category:G03F7/20]]
  2 KB (301 words) - 15:09, 30 November 2023
• US Patent Application 18447441. PHOTORESIST WITH POLAR-ACID-LABILE-GROUP simplified abstract
  [[Category:G03F7/38]] [[Category:G03F7/039]]
  2 KB (294 words) - 08:34, 6 December 2023
• 18740139. STRUCTURES FOR PATTERNING AND RELATED METHODS AND SYSTEMS (ASM IP Holding B.V.)
  [[Category:G03F7/00]] [[Category:G03F7/004]]
  2 KB (224 words) - 07:44, 19 December 2024
• Taiwan semiconductor manufacturing company, ltd. (20240280903). PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
  [[Category:G03F7/039]] [[Category:G03F7/004]]
  3 KB (393 words) - 07:06, 22 August 2024
• Fujifilm corporation (20240427243). ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  [[Category:G03F7/039]] [[Category:G03F7/004]]
  2 KB (240 words) - 02:58, 30 December 2024
• 18806898. CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS (Shin-Etsu Chemical Co., Ltd.)
  [[Category:G03F7/038]] [[Category:G03F7/004]]
  1 KB (148 words) - 04:50, 15 March 2025

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