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Category:H01L29/04
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Pages in category "H01L29/04"
The following 37 pages are in this category, out of 37 total.
1
- 17657822. Adjusting the Profile of Source/Drain Regions to Reduce Leakage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17907839. METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR FABRICATING SAME, DISPLAY PANEL, AND DISPLAY DEVICE simplified abstract (BOE Technology Group Co., Ltd.)
- 17981049. SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18053317. DISPLAY DEVICE simplified abstract (Samsung Display Co., Ltd.)
- 18151304. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18164600. SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18389625. INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract (Intel Corporation)
- 18433864. INSULATING FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18438894. METHOD FOR FABRICATING THE SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18457440. GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18494384. DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS simplified abstract (Intel Corporation)
- 18504760. SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18511711. EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516408. Fin Loss Prevention simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521253. SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18581153. TRANSISTORS HAVING NANOSTRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
I
- Intel corporation (20240105419). ALTERING OPERATIONAL CHARACTERISTICS OF A SEMICONDUCTOR DEVICE USING ACCELERATED IONS simplified abstract
- Intel corporation (20240194533). INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract
- Intel Corporation patent applications on June 13th, 2024
- Intel Corporation patent applications on March 28th, 2024
S
- Samsung electronics co., ltd. (20240096894). SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240164115). SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096976). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194787). TRANSISTORS HAVING NANOSTRUCTURES simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 13th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240136441). SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
U
- US Patent Application 17824915. EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION simplified abstract
- US Patent Application 18358112. Semiconductor Device and Method simplified abstract
- US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
- US Patent Application 18366763. FinFET Device and Method of Forming Same simplified abstract