Pages that link to "Category:Chia-Ching Lin of Portland OR (US)"
The following pages link to Category:Chia-Ching Lin of Portland OR (US):
Displaying 34 items.
- 17850078. SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHALCOGENIDE GROWTH FOR STACKED 2D CHANNELS simplified abstract (Intel Corporation) (← links)
- 17850623. STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH simplified abstract (Intel Corporation) (← links)
- 17852016. 2D LAYERED GATE OXIDE simplified abstract (Intel Corporation) (← links)
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation) (← links)
- 17940194. EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS simplified abstract (Intel Corporation) (← links)
- 17940944. FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240112730). DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract (← links)
- Intel corporation (20240105718). INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS simplified abstract (← links)
- Intel corporation (20240105770). NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE simplified abstract (← links)
- 17957945. DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract (Intel Corporation) (← links)
- 17957957. MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240186416). TMD INVERTED NANOWIRE INTEGRATION simplified abstract (← links)
- Intel corporation (20240206348). PROBABILISTIC AND DETERMINISTIC LOGIC DEVICES WITH REDUCED SYMMETRY MATERIALS simplified abstract (← links)
- Intel corporation (20240222113). PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL SYNTHESIS simplified abstract (← links)
- Intel corporation (20240222428). SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS simplified abstract (← links)
- Intel corporation (20240222441). SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES simplified abstract (← links)
- Intel corporation (20240222461). BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract (← links)
- Intel corporation (20240222483). 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract (← links)
- Intel corporation (20240222484). TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract (← links)
- Intel corporation (20240222485). TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GROWTH IN SUPERLATTICE WITH NITRIDES simplified abstract (← links)
- 18091279. PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL SYNTHESIS simplified abstract (Intel Corporation) (← links)
- 18091206. SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS simplified abstract (Intel Corporation) (← links)
- 18091197. SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES simplified abstract (Intel Corporation) (← links)
- 18091201. BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract (Intel Corporation) (← links)
- 18091211. 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract (Intel Corporation) (← links)
- 18092152. TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract (Intel Corporation) (← links)
- 18091209. TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GROWTH IN SUPERLATTICE WITH NITRIDES simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240321987). LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract (← links)
- 18187990. LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract (Intel Corporation) (← links)
- 18883126. FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM (Intel Corporation) (← links)
- 18216493. PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES OF VARYING WIDTH (Intel Corporation) (← links)
- Intel corporation (20250089310). THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE (← links)
- 18466246. THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE (Intel Corporation) (← links)
- Category:Tao Chu of Portland OR (US) (← links)