FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

Organization Name

Intel Corporation

Inventor(s)

Chia-Ching Lin of Portland OR (US)

Sou-Chi Chang of Portland OR (US)

Ashish Verma Penumatcha of Hillsboro OR (US)

Nazila Haratipour of Hillsboro OR (US)

Seung Hoon Sung of Portland OR (US)

Owen Y. Loh of Portland OR (US)

Jack Kavalieros of Portland OR (US)

Uygar E. Avci of Portland OR (US)

Ian A. Young of Portland OR (US)

FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

This abstract first appeared for US patent application 18883126 titled 'FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

Original Abstract Submitted

Described is a ferroelectric-based capacitor that improves reliability of a ferroelectric memory by using low-leakage insulating thin film. In one example, the low-leakage insulating thin film is positioned between a bottom electrode and a ferroelectric oxide. In another example, the low-leakage insulating thin film is positioned between a top electrode and ferroelectric oxide. In yet another example, the low-leakage insulating thin film is positioned in the middle of ferroelectric oxide to reduce the leakage current and improve reliability of the ferroelectric oxide.