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Category:H01L27/1157
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Pages in category "H01L27/1157"
The following 50 pages are in this category, out of 50 total.
1
- 17690154. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17702137. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17703130. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17720376. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17725993. MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17804997. SELF-ALIGNED ETCHING TECHNIQUES FOR MEMORY FORMATION simplified abstract (Micron Technology, Inc.)
- 17806902. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17819330. SEMICONDUCTOR MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING THE SAME AND FABRICATING METHODS OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17819538. ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES ISOLATED BY SLOT STRUCTURES, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17822712. STAIRCASE FORMATION IN A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17828339. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17851865. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17852812. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17858388. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17863317. SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17867962. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17868900. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17876271. MEMORY DEVICE INCLUDING PREFORMED RECESSES BETWEEN CONTACT STRUCTURES AND CONTROL GATES simplified abstract (Micron Technology, Inc.)
- 17876326. LATERAL ETCH STOPS FOR ACCESS LINE FORMATION IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17876694. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17893436. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17893718. FOLDED STAIRCASE VIA ROUTING FOR MEMORY simplified abstract (Micron Technology, Inc.)
- 17894524. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17896546. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17896775. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897350. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897460. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897976. ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED METHODS simplified abstract (Micron Technology, Inc.)
- 17898827. SELF-SUPPORTING SGD STADIUM simplified abstract (Micron Technology, Inc.)
- 17951337. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17962577. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17968058. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17970764. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17971443. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17983520. SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES simplified abstract (Samsung Electronics Co., Ltd.)
- 18047270. NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
B
M
- Micron technology, inc. (20240130128). SINGLE CRYSTAL SILICON CORES FOR STACKED MEMORY CELLS simplified abstract
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 8th, 2024
- Micron Technology, Inc. patent applications on January 18th, 2024
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
U
- US Patent Application 17804184. THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME simplified abstract
- US Patent Application 17825337. NON-VOLATILE MEMORY WITH INTER-DIE CONNECTION simplified abstract
- US Patent Application 17879140. Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Cells, Methods Used In Forming Integrated Circuitry, And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract