US Patent Application 17804184. THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME simplified abstract

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THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME

Organization Name

SanDisk Technologies LLC

Inventor(s)

Akihiro Tobioka of Nagoya (JP)

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804184 titled 'THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME

Simplified Explanation

The patent application describes a three-dimensional memory device that consists of alternating layers of insulating and electrically conductive materials.

  • The device has memory openings that extend vertically through the alternating layers.
  • Within each memory opening, there are memory opening fill structures.
  • Composite drain-select-level isolation structures divide each drain-select-level electrically conductive layer into multiple electrically conductive strips.
  • Each drain-select-level isolation structure includes a first isolation material portion that extends vertically through each drain-select-level electrically conductive layer.
  • Additionally, there are second isolation material portions that also extend vertically through each drain-select-level electrically conductive layer and a topmost dummy electrically conductive layer.


Original Abstract Submitted

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, and memory opening fill structures located within a respective one of the memory openings. Composite drain-select-level isolation structures divide each drain-select-level electrically conductive layer into a respective plurality of electrically conductive strips. Each drain-select-level isolation structure includes a respective first drain-select-level isolation material portion vertically extending through each drain-select-level electrically conductive layers and a respective set of second drain-select-level isolation material portions vertically extending through each of the drain-select-level electrically conductive layers and at least a topmost dummy electrically conductive layer that underlies the drain-select-level electrically conductive layers.

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