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Category:G11C11/4074
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Pages in category "G11C11/4074"
The following 139 pages are in this category, out of 139 total.
1
- 17689480. METHOD OF READING DATA IN A NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17804851. METHOD OF SEARCHING READ VOLTAGE OF NONVOLATILE MEMORY DEVICE USING REGRESSION ANALYSIS AND METHOD OF READING DATA FROM NONVOLATILE MEMORY DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17830042. DECODER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17831332. PRE-DECODER CIRCUITY simplified abstract (Micron Technology, Inc.)
- 17849100. ADJUSTING REFRESH RATE DURING SELF-REFRESH STATE simplified abstract (MICRON TECHNOLOGY, INC.)
- 17852035. DATA TRANSFER CIRCUITS IN NONVOLATILE MEMORY DEVICES AND NONVOLATILE MEMORY DEVICES INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852221. REFRESH DETERMINATION USING MEMORY CELL PATTERNS simplified abstract (MICRON TECHNOLOGY, INC.)
- 17862472. STORAGE DEVICE AND ELECTRONIC DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17863037. NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17881187. MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17881208. ELECTRONIC DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17893946. APPARATUSES AND METHODS FOR PROVIDING INTERNAL POWER VOLTAGES simplified abstract (Micron Technology, Inc.)
- 17894089. MEMORY WITH SINGLE TRANSISTOR SUB-WORD LINE DRIVERS, AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS simplified abstract (Micron Technology, Inc.)
- 17948582. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17952826. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17955978. MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17994397. WORD LINE PUMP DEVICE OF DYNAMIC RANDOM ACCESS MEMORY CHIP AND CLAMP CIRCUIT THEREOF simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18045541. NONVOLATILE MEMORY DEVICE HAVING MULTI-STACK MEMORY BLOCK AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18057328. NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE DEVICE, AND MEMORY SYSTEM INCLUDING THE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18061827. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18109338. MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18169100. SENSE AMPLIFIER AND OPERATING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18221598. SEMICONDUCTOR CHIP CAPABLE OF CALIBRATING BIAS VOLTAGE SUPPLIED TO WRITE CLOCK BUFFER REGARDLESS OF PROCESS VARIATION AND TEMPERATURE VARIATION, AND DEVICES INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18223097. DEVICE AND METHOD FOR CALIBRATING REFERENCE VOLTAGE simplified abstract (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
- 18227355. MEMORY CELL ARRAY OF A STATIC RANDOM ACCESS MEMORY AND A STATIC RANDOM ACCESS MEMORY INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18239140. SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHIP INCLUDING A PERIPHERAL CIRCUIT simplified abstract (Kioxia Corporation)
- 18244069. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE READ AND WRITE GATES simplified abstract (MICRON TECHNOLOGY, INC.)
- 18312747. APPARATUSES AND METHODS FOR INPUT RECEIVER CIRCUITS AND RECEIVER MASKS FOR SAME simplified abstract (MICRON TECHNOLOGY, INC.)
- 18354919. VOLATILE MEMORY DEVICE INCLUDED IN MEMORY SYSTEM AND METHOD FOR EXTENDING LIFE EXPECTANCY THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18368446. MEMORY DEVICE AND PRECHARGING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18377751. VOLTAGE REGULATOR, MEMORY DEVICE INCLUDING VOLTAGE REGULATOR, AND OPERATION METHOD OF MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18402172. Write Driver Boost Circuit for Memory Cells simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403516. APPARATUS WITH DATA-RATE-BASED VOLTAGE CONTROL MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Lodestar Licensing Group LLC)
- 18404411. VOLTAGE SUPPLY CIRCUIT, MEMORY DEVICE INCLUDING THE SAME, AND OPERATING METHOD OF MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18407830. REFERENCE POTENTIAL GENERATING CIRCUIT AND CONTROL METHOD THEREOF simplified abstract (REALTEK SEMICONDUCTOR CORPORATION)
- 18415023. Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18421729. REFERENCE VOLTAGE ADJUSTMENT FOR WORD LINE GROUPS simplified abstract (Micron Technology, Inc.)
- 18423583. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18434404. MEMORY WITH PARTIAL ARRAY REFRESH simplified abstract (Lodestar Licensing Group LLC)
- 18447826. ONE-TIME PROGRAMMABLE MEMORY BIT CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18482663. SEMICONDUCTOR DEVICE HAVING DIE RING CONDUCTOR simplified abstract (Micron Technology, Inc.)
- 18488656. Dynamic Refresh Rate Control simplified abstract (Apple Inc.)
- 18490240. LOW DROPOUT REGULATOR, CLOCK GENERATING CIRCUIT, AND MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18493051. MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18495202. NONVOLATILE MEMORY DEVICE FOR PERFORMING MULTI-PLANE READ OPERATION AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18499449. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18523045. FLASH MEMORY AND READ RECOVERY METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18581018. NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18586149. VARYING-POLARITY READ OPERATIONS FOR POLARITY-WRITTEN MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18587935. MEMORY DEVICE CONFIGURED TO PERFORM A SEARCH OPERATION simplified abstract (Kioxia Corporation)
- 18589184. READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18600715. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18601456. VARIABLE VOLTAGE BIT LINE PRECHARGE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18606198. APPARATUSES AND METHODS FOR INPUT RECEIVER CIRCUITS AND RECEIVER MASKS FOR SAME simplified abstract (Lodestar Licensing Group LLC)
- 18607686. Reconfiguring Write Groups Based On Data Migration simplified abstract (Pure Storage, Inc.)
- 18624312. MEMORY CARD WITH MULTIPLE MODES, AND HOST DEVICE CORRESPONDING TO THE MEMORY CARD simplified abstract (Kioxia Corporation)
- 18667802. PRE-DECODER CIRCUITRY simplified abstract (Micron Technology, Inc.)
- 18670778. MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18671775. MEMORY SYSTEM, CONTROL METHOD, AND POWER CONTROL CIRCUIT simplified abstract (Kioxia Corporation)
- 18672623. ONE-TIME-PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18675770. BIT LINE LOGIC CIRCUIT AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
A
K
- Kioxia corporation (20240304239). MEMORY DEVICE CONFIGURED TO PERFORM A SEARCH OPERATION simplified abstract
- Kioxia corporation (20240312510). MEMORY SYSTEM, CONTROL METHOD, AND POWER CONTROL CIRCUIT simplified abstract
- Kioxia corporation (20240312513). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia Corporation patent applications on September 12th, 2024
- Kioxia Corporation patent applications on September 19th, 2024
M
- Micron technology, inc. (20240161812). Integrated Assemblies simplified abstract
- Micron technology, inc. (20240203481). DECODING ARCHITECTURE FOR MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240203482). Negative Pull-Down Voltage in a Sense Amplifier simplified abstract
- Micron technology, inc. (20240242760). REFERENCE VOLTAGE ADJUSTMENT FOR WORD LINE GROUPS simplified abstract
- Micron technology, inc. (20240257842). CAPACITIVE SENSING WITH A MICRO PUMP IN A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240281171). READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240304233). PRE-DECODER CIRCUITRY simplified abstract
- Micron technology, inc. (20240312518). VARYING-POLARITY READ OPERATIONS FOR POLARITY-WRITTEN MEMORY CELLS simplified abstract
- Micron Technology, Inc. patent applications on August 1st, 2024
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 8th, 2024
- Micron Technology, Inc. patent applications on January 18th, 2024
- Micron Technology, Inc. patent applications on July 18th, 2024
- Micron Technology, Inc. patent applications on June 20th, 2024
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on September 12th, 2024
- Micron Technology, Inc. patent applications on September 19th, 2024
S
- Samsung electronics co., ltd. (20240096396). MEMORY DEVICE AND PRECHARGING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240105255). SEMICONDUCTOR MEMORY DEVICES HAVING ADJUSTABLE I/O SIGNAL LINE LOADING THAT SUPPORTS REDUCED POWER CONSUMPTION DURING READ AND WRITE OPERATIONS simplified abstract
- Samsung electronics co., ltd. (20240119997). SEMICONDUCTOR CHIP CAPABLE OF CALIBRATING BIAS VOLTAGE SUPPLIED TO WRITE CLOCK BUFFER REGARDLESS OF PROCESS VARIATION AND TEMPERATURE VARIATION, AND DEVICES INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240161816). VOLTAGE REGULATOR, MEMORY DEVICE INCLUDING VOLTAGE REGULATOR, AND OPERATION METHOD OF MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240184320). LOW DROPOUT REGULATOR, CLOCK GENERATING CIRCUIT, AND MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240194243). NONVOLATILE MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240203478). NONVOLATILE MEMORY DEVICE FOR PERFORMING MULTI-PLANE READ OPERATION AND OPERATION METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240221826). FLASH MEMORY AND READ RECOVERY METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240233804). VOLTAGE SUPPLY CIRCUIT, MEMORY DEVICE INCLUDING THE SAME, AND OPERATING METHOD OF MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240233812). MEMORY CELL ARRAY OF A STATIC RANDOM ACCESS MEMORY AND A STATIC RANDOM ACCESS MEMORY INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240242755). NON-VOLATILE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240248610). VOLATILE MEMORY DEVICE INCLUDED IN MEMORY SYSTEM AND METHOD FOR EXTENDING LIFE EXPECTANCY THEREOF simplified abstract
- Samsung electronics co., ltd. (20240290369). MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240312491). MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 6th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 6th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 19th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240312501). BIT LINE LOGIC CIRCUIT AND METHOD simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312543). ONE-TIME-PROGRAMMABLE MEMORY simplified abstract
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240135983). Write Driver Boost Circuit for Memory Cells simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240212745). VARIABLE VOLTAGE BIT LINE PRECHARGE simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 27th, 2024
U
- US Patent Application 17824103. METHOD FOR PROVIDING DYNAMIC VOLTAGE REGULATOR CHARACTERISTIC CHANGES simplified abstract
- US Patent Application 17825600. APPARATUSES AND METHODS FOR BIAS TEMPERATURE INSTABILITY MITIGATION simplified abstract
- US Patent Application 17893946. APPARATUSES AND METHODS FOR PROVIDING INTERNAL POWER VOLTAGES simplified abstract
- US Patent Application 17986628. MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE simplified abstract
- US Patent Application 18310959. MEMORY CONTROLLER SEARCHING FOR DATA INPUT/OUTPUT VOLTAGE, MEMORY SYSTEM, AND OPERATING METHOD OF THE MEMORY SYSTEM simplified abstract
- US Patent Application 18327062. POWER SUPPLY SWITCHING CIRCUIT AND MEMORY simplified abstract
- US Patent Application 18446959. STORAGE SYSTEM INCLUDING A DECOUPLING DEVICE HAVING A PLURALITY OF UNIT CAPACITORS simplified abstract
- US Patent Application 18448152. NON-VOLATILE MEMORY CIRCUIT AND METHOD simplified abstract