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Intel corporation (20250006623). FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY: Difference between revisions

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==Inventor(s)==
==Inventor(s)==


[[:Category:Shuqi Lai of Phoenix AZ (US)|Shuqi Lai of Phoenix AZ (US)]][[Category:Shuqi Lai of Phoenix AZ (US)]]
[[:Category:Shuqi Lai of Phoenix AZ US|Shuqi Lai of Phoenix AZ US]][[Category:Shuqi Lai of Phoenix AZ US]]


[[:Category:Jieying Kong of Chandler AZ (US)|Jieying Kong of Chandler AZ (US)]][[Category:Jieying Kong of Chandler AZ (US)]]
[[:Category:Jieying Kong of Chandler AZ US|Jieying Kong of Chandler AZ US]][[Category:Jieying Kong of Chandler AZ US]]


[[:Category:Dilan Seneviratne of Phoenix AZ (US)|Dilan Seneviratne of Phoenix AZ (US)]][[Category:Dilan Seneviratne of Phoenix AZ (US)]]
[[:Category:Dilan Seneviratne of Phoenix AZ US|Dilan Seneviratne of Phoenix AZ US]][[Category:Dilan Seneviratne of Phoenix AZ US]]


[[:Category:Whitney Bryks of Tempe AZ (US)|Whitney Bryks of Tempe AZ (US)]][[Category:Whitney Bryks of Tempe AZ (US)]]
[[:Category:Whitney Bryks of Tempe AZ US|Whitney Bryks of Tempe AZ US]][[Category:Whitney Bryks of Tempe AZ US]]


==FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY==
==FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY==
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This abstract first appeared for US patent application 20250006623 titled 'FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY
This abstract first appeared for US patent application 20250006623 titled 'FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY


==Original Abstract Submitted==
==Original Abstract Submitted==

Latest revision as of 02:40, 25 March 2025

FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY

Organization Name

intel corporation

Inventor(s)

Shuqi Lai of Phoenix AZ US

Jieying Kong of Chandler AZ US

Dilan Seneviratne of Phoenix AZ US

Whitney Bryks of Tempe AZ US

FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY

This abstract first appeared for US patent application 20250006623 titled 'FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY

Original Abstract Submitted

microelectronic integrated circuit package structures include one or more integrated circuit (ic) package metallization levels comprising metallization features. a dielectric material is adjacent to one or more of the metallization features, where the dielectric material comprises a matrix material and a surfactant. a plurality of substantially spherical pores are within the matrix material, where the substantially spherical pores are surrounded by an outer shell comprising the matrix material.

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