Intel corporation (20250006623). FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY
FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY
Organization Name
Inventor(s)
Jieying Kong of Chandler AZ US
Dilan Seneviratne of Phoenix AZ US
FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY
This abstract first appeared for US patent application 20250006623 titled 'FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY
Original Abstract Submitted
microelectronic integrated circuit package structures include one or more integrated circuit (ic) package metallization levels comprising metallization features. a dielectric material is adjacent to one or more of the metallization features, where the dielectric material comprises a matrix material and a surfactant. a plurality of substantially spherical pores are within the matrix material, where the substantially spherical pores are surrounded by an outer shell comprising the matrix material.
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