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Category:Minwoo Jang of Portland OR (US)
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This category has the following 2 subcategories, out of 2 total.
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Pages in category "Minwoo Jang of Portland OR (US)"
The following 18 pages are in this category, out of 18 total.
1
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation)
- 17940944. FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS simplified abstract (Intel Corporation)
- 17956188. ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT simplified abstract (Intel Corporation)
- 18072569. INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP BOUNDARY VIA simplified abstract (Intel Corporation)
- 18187782. INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT simplified abstract (Intel Corporation)
- 18187801. INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT simplified abstract (Intel Corporation)
- 18187965. ROUNDED NANORIBBONS WITH REGROWN CAPS simplified abstract (Intel Corporation)
- 18187990. LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract (Intel Corporation)
- 18216476. MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY USING BACKSIDE PASSIVATION LAYER (Intel Corporation)
- 18216493. PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES OF VARYING WIDTH (Intel Corporation)
I
- Intel corporation (20240105718). INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS simplified abstract
- Intel corporation (20240105770). NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE simplified abstract
- Intel corporation (20240113118). ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT simplified abstract
- Intel corporation (20240178101). INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP BOUNDARY VIA simplified abstract
- Intel corporation (20240321859). INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT simplified abstract
- Intel corporation (20240321887). INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT simplified abstract
- Intel corporation (20240321962). ROUNDED NANORIBBONS WITH REGROWN CAPS simplified abstract
- Intel corporation (20240321987). LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract