Pages that link to "Category:Minwoo Jang of Portland OR (US)"
The following pages link to Category:Minwoo Jang of Portland OR (US):
Displaying 20 items.
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation) (← links)
- 17940944. FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240113118). ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT simplified abstract (← links)
- Intel corporation (20240105718). INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS simplified abstract (← links)
- Intel corporation (20240105770). NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE simplified abstract (← links)
- 17956188. ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240178101). INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP BOUNDARY VIA simplified abstract (← links)
- 18072569. INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP BOUNDARY VIA simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240321859). INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT simplified abstract (← links)
- Intel corporation (20240321887). INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT simplified abstract (← links)
- Intel corporation (20240321962). ROUNDED NANORIBBONS WITH REGROWN CAPS simplified abstract (← links)
- Intel corporation (20240321987). LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract (← links)
- 18187782. INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT simplified abstract (Intel Corporation) (← links)
- 18187801. INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT simplified abstract (Intel Corporation) (← links)
- 18187965. ROUNDED NANORIBBONS WITH REGROWN CAPS simplified abstract (Intel Corporation) (← links)
- 18187990. LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract (Intel Corporation) (← links)
- 18216476. MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY USING BACKSIDE PASSIVATION LAYER (Intel Corporation) (← links)
- 18216493. PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES OF VARYING WIDTH (Intel Corporation) (← links)
- Category:Tao Chu of Portland OR (US) (← links)
- Category:Chia-Ching Lin of Portland OR (US) (← links)