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Category:H01L29/15
Pages in category "H01L29/15"
The following 33 pages are in this category, out of 33 total.
1
- 17977013. EPITAXIAL WAFER AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18329881. BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18393009. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18485740. SUPERLATTICE BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18613356. METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
- 18613401. NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
- 18613435. METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
- 18613509. NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS simplified abstract (ATOMERA INCORPORATED)
- 18613557. METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS simplified abstract (ATOMERA INCORPORATED)
- 18669156. RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
- 18742191. FLASH MEMORY DEVICE AND METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
B
K
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- Samsung electronics co., ltd. (20240213327). SUPERLATTICE BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240266402). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240290888). SEMICONDUCTOR DEVICE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on August 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 27th, 2024
T
- Taiwan semiconductor manufacturing company, ltd. (20240266403). BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240339547). FLASH MEMORY DEVICE AND METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379877). SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 8th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on October 10th, 2024
- Texas Instruments Incorporated patent applications on January 30th, 2025