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Category:H01L21/443
Pages in category "H01L21/443"
The following 14 pages are in this category, out of 14 total.
1
- 18091201. BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract (Intel Corporation)
- 18302692. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SK hynix Inc.)
- 18481444. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
I
S
- Samsung electronics co., ltd. (20240120403). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- Sk hynix inc. (20240162352). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- SK hynix Inc. patent applications on May 16th, 2024
T
- Taiwan semiconductor manufacturing company, ltd. (20240213367). TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379348). Deposition Process for Forming Semiconductor Device and System simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 27th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024